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Ion Mass Spectroscopy (ion + mass_spectroscopy)
Kinds of Ion Mass Spectroscopy Selected AbstractsThe entrapment of corrosion products from CoCr implant alloys in the deposits of calcium phosphate: A comparison of serum, synovial fluid, albumin, EDTA, and waterJOURNAL OF ORTHOPAEDIC RESEARCH, Issue 8 2006A. C. Lewis Abstract Physical wear of orthopedic implants is inevitable. CoCr alloy samples, typically used in joint reconstruction, corrode rapidly after removal of the protective oxide layer. The behavior of CoCr pellets immersed in human serum, foetal bovine serum (FBS), synovial fluid, albumin in phosphate-buffered saline (PBS), EDTA in PBS, and water were studied using X-ray Photoelectron Spectroscopy (XPS) and Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS). The difference in the corrosive nature of human serum, water, albumin in PBS and synovial fluid after 5 days of immersion was highlighted by the oxide layer, which was respectively 15, 3.5, 1.5, and 1.5 nm thick. The thickness of an additional calcium phosphate deposit from human serum and synovial fluid was 40 and 2 nm, respectively. Co and Cr ions migrated from the bulk metal surface and were trapped in this deposit by the phosphate anion. This may account for the composition of wear debris from CoCr orthopedic implants, which is known to consist predominantly of hydroxy-phosphate compounds. Known components of synovial fluid including proteoglycans, pyrophosphates, phospholipids, lubricin, and superficial zone protein (SZP), have been identified as possible causes for the lack of significant calcium phosphate deposition in this environment. Circulation of these compounds around the whole implant may inhibit calcium phosphate deposition. © 2006 Orthopaedic Research Society. Published by Wiley Periodicals, Inc. J Orthop Res 24:1587,1596, 2006 [source] Silicon-Doped LiFePO4 Single Crystals: Growth, Conductivity Behavior, and DiffusivityADVANCED FUNCTIONAL MATERIALS, Issue 11 2009Ruhul Amin Abstract Single crystals of silicon doped LiFePO4 with a silicon content of 1% are grown successfully by the floating zone technique and characterized by single-crystal and powder X-ray diffraction, secondary ion mass spectroscopy, and chemical analysis. Electron paramagnetic resonance demonstrates the presence of only Fe2+; no traces of Fe3+ are found. Impedance spectroscopy as well as step-function polarization/depolarization (DC) measurements are carried out using the cells Ti/LiFe(Si)PO4/Ti and LiAl/LiI/LiFe(Si)PO4/LiI/LiAl. The electronic and ionic conductivities as well as the Li-diffusivity of the sample in the major crystallographic directions ([h00], [0k0], and [00l]) are determined. Within experimental error the transport properties along the b- and c-axes are found to be the same but differ significantly from the a-axis, which exhibits lower values. Compared to undoped LiFePO4, Si-doping leads to an increase of the ionic conductivity while the electronic conductivity decreases, which is in agreement with a donor effect. The activation energies of conductivities and diffusivities are interpreted in terms of defect chemistry and relevant Brouwer diagrams are given. [source] Static SIMS studies of the oxides and hydroxides of aluminiumJOURNAL OF MASS SPECTROMETRY (INCORP BIOLOGICAL MASS SPECTROMETRY), Issue 1 2007S. Verdier Abstract The degree of hydroxylation or hydration of aluminium surfaces has been examined by static secondary ion mass spectroscopy (SSIMS). The SSIMS spectra of a series of aluminium oxide, oxyhydroxide and hydroxide surfaces have been obtained using instruments in three configurations. Similarities were observed in both negative and positive secondary ions spectra. Even though a direct comparison of the relative intensities cannot be made from one instrument to the other, a similar ranking of the various aluminium hydroxylation states was observed. Several ranking methods are discussed, as well as the similarities and differences observed while using the three instruments. Similar secondary ions were detected whatever the degree of hydroxylation of the aluminium oxide. This argues in favour of the formation of fragments by the combination of individually sputtered atoms or clusters to form the more stable secondaries, rather than the kick-off of ,structure-related' clusters originating directly from the upper surface layer. Copyright © 2006 John Wiley & Sons, Ltd. [source] Solid Solubility and Precipitation in a Single-Crystal Alumina,Zirconia SystemJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 12 2002Matthew A. Stough Solid solubility was examined in Zr-doped sapphire and Al-doped yttria-stabilized zirconia (YSZ) single crystals from 1200° to 1600°C. Specimens were fabricated via ion implantation of single crystals, followed by annealing in air. Secondary ion mass spectroscopy (SIMS) was used to quantify solute redistribution during annealing. Comparison of SIMS results with analytical electron microscopy (AEM) revealed an alumina solubility of 0.2,0.3 wt% in zirconia, and a zirconia solubility of 0.004,0.027 wt% in alumina. Direct imaging of zirconia precipitates revealed that tetragonal zirconia precipitates from supersaturated sapphire with the following orientation relationship: (100)tetragonal, (0001)sapphire and [01¯1]tetragonal, [12¯10]sapphire. [source] Study of the activation process of Mg dopant in GaN:Mg layersPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 3 2006B. Paszkiewicz Abstract GaN:Mg layers with different concentration of Mg dopant were grown by metalorganic vapour phase epitaxy. The incorporation of Mg was verified by secondary ion mass spectroscopy. In order to dissociate Mg-related complexes and thus electrically activate the acceptor dopant, the as-grown layers were annealed in pure N2 at ,800 °C for 30 minutes. The influence of the post-growth annealing on the layer properties was studied by photoluminescence (PL) and impedance spectroscopy. Impedance spectroscopy measurement showed that the annealed samples reveal higher charge concentrations and lower sheet resistance. Moreover, the relaxation time of hole traps decreased in annealed samples by one order of magnitude compared to as-grown samples. The changes in the electrical properties have been correlated with the changes in the PL spectra. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] 3C-SiC:Ge alloys grown on Si (111) substrates by SSMBEPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2004P. Weih Abstract In this work for the first time a comprehensive research of (Si1-xC1-y)Gex+y thin films epitaxially grown on Si (111) substrates by solid source molecular beam epitaxy are presented. The layers were grown at substrate temperatures ranging from 900 °C to 1040 °C with a growth rate of 0.6 nm/min. They were analysed by atomic force microscopy, scanning electron microscopy, X-ray diffraction, Auger electron spectroscopy, secondary ion mass spectroscopy and transmission electron microscopy. The structural analysis revealed that the grown epitaxial layer consists of the cubic polytype. A maximum Ge incorporation of 0.16% was achieved in epitaxial layers grown at 900 °C. It was obtained that the Ge concentration decreases with increasing growth temperature. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Effects of Mg fluctuation on the electrical and optical properties in p-GaN/undoped GaN layers dependent on the growth temperaturePHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2003C. S. Kim Abstract The effects of heavly Mg doping dependent on the growth temperature of p-GaN layers grown on undoped GaN layers by metalorganic chemical vapor deposition (MOCVD) on electrical and optical properties were studied by capacitance,voltage (C,V) and temperature-dependent photoluminescence (TDPL), respectively. At high growth temperature of p-GaN above 1110 °C, optical microscopy images as well as atomic force microscopy (AFM) images show polygonal hillocks on heavily Mg-doped GaN surface. It was also found that fluctuation of Mg concentration ([Mg]) measured by secondary ion mass spectroscopy (SIMS) was increased with increasing growth temperature. These phenomena were appeared to decrease NA,ND and change PL emission from 3.1,3.2 eV of conduction band-to-shallow Mg acceptor (e, A) transition to 2.8,2.9 eV of Mg-related deep donor-to-acceptor pair (DAP) transition. [source] | ||||||||||