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Ion Dose (ion + dose)
Selected AbstractsMetal Ion Implantation for the Fabrication of Stretchable Electrodes on ElastomersADVANCED FUNCTIONAL MATERIALS, Issue 3 2009Samuel Rosset Abstract Here, the use of low-energy metal ion implantation by filtered cathodic vacuum arc to create highly deformable electrodes on polydimethylsiloxane (PDMS) membranes is reported. Implantation leads to the creation of nanometer-size clusters in the first 50,nm below the surface. When the elastomer is stretched, these small clusters can move relative to one another, maintaining electrical conduction at strains of up to 175%. Sheet resistance versus ion dose, resistance versus strain, time stability of the resistance, and the impact of implantation on the elastomer's Young's modulus are investigated for gold, palladium, and titanium implantations. Of the three tested metals, gold has the best performance, combining low and stable surface resistance, very high strain capabilities before loss of electrical conduction, and low impact on the Young's modulus of the PDMS membrane. These electrodes are cyclically strained to 30% for more than 105 cycles and remain conductive. In contrast, sputtered or evaporate metals films cease to conduct at strains of order 3%. Additionally, metal ion implantation allows for creating semi-transparent electrodes. The optical transmission through 25-µm-thick PDMS membranes decreases from 90% to 60% for Pd implantations at doses used to make stretchable electrodes. The implantation technique presented here allows the rapid production of reliable stretchable electrodes for a number of applications, including dielectric elastomer actuators and foldable or rollable electronics. [source] Implantation damage recovery and carrier activation studies of Si-implanted Al0.18Ga0.82N by temperature dependent Hall-effect measurementsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2007Mee-Yi Ryu Abstract N-type activation studies of Si-implanted Al0.18Ga0.82N have been made as a function of anneal temperature and ion dose to obtain maximum possible activation efficiency. Nearly 100 and 95% electrical activation efficiencies were obtained for Si-implanted Al0.18Ga0.82N with doses of 5x1014 and 1x1015 cm,2 and annealing at 1250 and 1200 oC for 25 min, respectively. The room temperature sheet resistivity decreases from 528 to 196 ,/square with increasing anneal temperature from 1150 to 1250 oC for a dose of 5x1014 cm,2. Both sheet carrier concentration (activation efficiency) and mobility increase with anneal temperature, indicating an improved implantation damage recovery with anneal temperature. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Role of structural modification on the electrical properties of poly(ethylene terephthalate) irradiated with 90-MeV carbon ion beamPOLYMER ENGINEERING & SCIENCE, Issue 6 2008A. Srivastava Thin films of poly(ethylene terephthalate) (PET) having a thickness of 100 ,m were exposed to different ion fluence of swift heavy ions of carbon in the range of 5 × 1011 , 5 × 1013 ions/cm2. The effect of ion beam on structural and electrical modification has been studied by UV/vis, FTIR, X-ray diffraction (XRD), Differential Scanning Calorimetery (DSC), and AC electrical measurement techniques. On irradiation, a shift in absorption wavelength toward the red end of spectrum with increase of ion fluence was observed. The intensity of crystalline IR bands and main diffraction peak in XRD pattern were found to decrease with increase in ion fluence. It indicates the loss of crystallinity induced by ion-beam irradiation. The crystallite size was found to increase on irradiation. The melting temperature (Tm) of PET films increased at a low ion dose (5.0 × 1012 ions/cm2), while it decreased at higher ion fluence (50.0 × 1012 ions/cm2). The dielectric constant (,,) of PET films was increased with increase of ion fluence. The modifications brought about in the dielectric constant are correlated with chemical and molecular structural changes occurring on irradiation. POLYM. ENG. SCI., 2008. © 2008 Society of Plastics Engineers. [source] Ion beam synthesis of buried Zn-VI quantum dots in SiO2, grazing incidence small-angle X-ray scattering studiesJOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 3-1 2003I.D. Desnica-Frankovic Grazing incidence small-angle X-ray scattering was used to study ion-beam synthesized Zn-VI compound-semiconductor quantum dots (QDs), buried in a SiO2 matrix. The ZnTe and ZnS QDs were formed by successive ion implantation of constituent atoms, at high ion doses and subsequent annealing at different temperatures in the 1070,1370 K range. In Zn and Te implanted SiO2, small nano-crystals were formed at higher annealing-temperatures, a bimodal size distribution of nano-particles was observed for both materials, which could be explained by an interplay of Ostwald ripening and enhanced diffusion in the irradiation-damaged region. [source] | ||||||||||