Home  About us  Contact
 

Growth Conditions. (growth + conditions)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

Numerical modeling and investigation of liquid phase epitaxy of Hg1,xCdxTe infrared detectors

CRYSTAL RESEARCH AND TECHNOLOGY, Issue 9 2005
K. Lin
Abstract Numerical investigations have been performed for modeling the global temperature field of an industrial liquid phase epitaxy (LPE) facility and to estimate the temperature fluctuations in a Te-rich solution during the LPE growth. The numerical results agreed well with experimental data and therefore provide reliable reference points for experimenters for further improvements of the growth conditions. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Examination of intermediate species in GaN metal-organic vapor-phase epitaxy by selective-area growth

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7-8 2010
Masakazu Sugiyama
Abstract The major reactive intermediate species of GaN has been deduced and its surface reaction rate constant has been obtained through the analysis of multi-scale growth-rate profiles both in the reactor-scale and in the micrometer-scale that were obtained by selective-area growth. Usually, it is difficult to explore surface reaction kinetics, especially for metal-organic vapour phase epitaxy (MOVPE), because of mass-transfer-limited kinetics. This multi-scale analysis, however, has clarified that a single precursor, a gas-phase reaction product between (CH3)3Ga and NH3, leads to the growth of GaN with a surface reaction probability of approximately 0.4 at 1400 K which is a typical growth temperature of GaN. Contribution of higher-order polymers was not significant in growth rate, but they seemed to be a cause of degraded surface morphology. A lumped reaction model of GaN MOVPE was proposed that led to reasonable agreement between a simulated growth-rate profile in the reactor-scale and a corresponding measured profile, which would lead to improved design of reactors and growth conditions. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Electron transport properties of low sheet-resistance two-dimensional electron gases in ultrathin AlN/GaN heterojunctions grown by MBE

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2008
Yu Cao
Abstract A study of the transport properties of polarizationinduced 2DEGs at MBE-grown single AlN/GaN heterostructures with different growth rates is reported. It is observed that faster growth rates lead to high mobilities, approaching , 1600 cm2/Vs at 300 K and , 6000 cm2/Vs at low temperatures for ultrathin (2.3 nm AlN/GaN) heterojunctions. By using a theoretical model in conjunction with experimentally measured transport properties, it is concluded that the 300 K sheet resistances of very high density 2DEGs at AlN/GaN heterojunctions are currently limited (, 170 , /,) by interface roughness scattering, and can be further reduced by improving the growth conditions. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Effect of growth conditions on grown-in defect formation and luminescence efficiency in Ga(In)NP epilayers grown by molecular-beam epitaxy

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2008
D. Dagnelund
Abstract A detailed study of the impact of different growth conditions (i.e. ion bombardment, nitrogen flow and In content) on the defect formation in Ga(In)NP epilayers grown on GaP substrates by solid-source molecular beam epitaxy is performed. Reduced nitrogen ion bombardment during the growth is shown to significantly reduce formation of defects acting as competing recombination centers, such as a Ga interstitial defect and other unidentified defects revealed by optically detected magnetic resonance. Further, high nitrogen flow is found to be even more effective than the ion bombardment in introducing the defects. The incorporation of In by 5.1% is, on the other hand, found not to affect the introduction of defects. The results provide a useful insight into the formation mechanism of the defects that will hopefully shed light on a control of the defect introduction in the alloys by optimizing growth conditions. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]