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Air Stability (air + stability)
Selected AbstractsHighly Efficient p-i-n and Tandem Organic Light-Emitting Devices Using an Air-Stable and Low-Temperature-Evaporable Metal Azide as an n-DopantADVANCED FUNCTIONAL MATERIALS, Issue 11 2010Kyoung Soo Yook Abstract Cesium azide (CsN3) is employed as a novel n-dopant because of its air stability and low deposition temperature. CsN3 is easily co-deposited with the electron transporting materials in an organic molecular beam deposition chamber so that it works well as an n-dopant in the electron transport layer because its evaporation temperature is similar to that of common organic materials. The driving voltage of the p-i-n device with the CsN3 -doped n-type layer and a MoO3 -doped p-type layer is greatly reduced, and this device exhibits a very high power efficiency (57,lm W,1). Additionally, an n-doping mechanism study reveals that CsN3 was decomposed into Cs and N2 during the evaporation. The charge injection mechanism was investigated using transient electroluminescence and capacitance,voltage measurements. A very highly efficient tandem organic light-emitting diodes (OLED; 84,cd A,1) is also created using an n,p junction that is composed of the CsN3 -doped n-type organic layer/MoO3 p-type inorganic layer as the interconnecting unit. This work demonstrates that an air-stable and low-temperature-evaporable inorganic n-dopant can very effectively enhance the device performance in p-i-n and tandem OLEDs, as well as simplify the material handling for the vacuum deposition process. [source] Transistor Paint: Environmentally Stable N -alkyldithienopyrrole and Bithiazole-Based Copolymer Thin-Film Transistors Show Reproducible High Mobilities without AnnealingADVANCED FUNCTIONAL MATERIALS, Issue 21 2009Junying Liu Abstract New solution processable 4-(2-hexyldecan)- 4H -bisthieno[2,3- d:3,,2,- b]pyrrole and 4,4,-dialkyl-2,2,-bithiazole-based copolymers (PBTzDTPs) are synthesized with excellent FET performance. These novel copolymers have considerable potential in printable electronics as they have high charge carrier mobilities, excellent air stability, good solution processibility, and no requirement for post-deposition thermal annealing, all requirements for this field of application. The thin film transistors fabricated from PBTzDTPs achieve field effect mobilities as high as 0.14,cm2 V,1 s,1 with current on/off ratios up to 106 without thermal annealing. In addition, the devices exhibit stable performance in air, showing no significant degradation over 60 days. Moreover, the polymers described here provide an excellent example of the systems in which higher mobility performance does not require higher crystalline, long-range ordered structures. Such a system appears to be particularly promising for rapid fabrication techniques, where kinetic conditions usually prevent the development of long-range order. [source] High Electron Mobility and Ambient Stability in Solution-Processed Perylene-Based Organic Field-Effect TransistorsADVANCED MATERIALS, Issue 16 2009Claudia Piliego Bottom-contact n-channel OFETs based on spin-coated films of N,N, -1H,1H -perfluorobutyl dicyanoperylenediimide (PDI-FCN2) exhibit a saturation-regime mobility of 0.15,cm2 V,1 s,1 in vacuum and good air stability. These performances are attributed to the high crystallinity and to the edge-on orientation promoted by the thermal treatment, as showed by confocal laser microscopy. [source] Improvements in Stability and Performance of N,N, -Dialkyl Perylene Diimide-Based n-Type Thin-Film TransistorsADVANCED MATERIALS, Issue 16 2009Yugeng Wen The stability and performance of N,N, -dioctyl perylene diimide (PDI-C8) and N,N, -ditridecyl perylene diimide (PDI-C13) thin-film transistors (TFTs) are increased using optimized growth rates and sulfur-modified top-contact electrodes. Changing the grain size and the depth of grain boundaries by controlling film growth rate is another way of increasing the air stability of perylene diimides without electron-withdrawing groups. [source] Semiconducting Thienothiophene Copolymers: Design, Synthesis, Morphology, and Performance in Thin-Film Organic TransistorsADVANCED MATERIALS, Issue 10-11 2009Iain McCulloch Abstract Organic semiconductors are emerging as a viable alternative to amorphous silicon in a range of thin-film transistor devices. With the possibility to formulate these p-type materials as inks and subsequently print into patterned devices, organic-based transistors offer significant commercial advantages for manufacture, with initial applications such as low performance displays and simple logic being envisaged. Previous limitations of both air stability and electrical performance are now being overcome with a range of both small molecule and polymer-based solution-processable materials, which achieve charge carrier mobilities in excess of 0.5,cm2 V,1 s,1, a benchmark value for amorphous silicon semiconductors. Polymer semiconductors based on thienothiophene copolymers have achieved amongst the highest charge carrier mobilities in solution-processed transistor devices. In this Progress Report, we evaluate the advances and limitations of this class of polymer in transistor devices. [source] Air-Stable Polymer Electronic Devices,ADVANCED MATERIALS, Issue 18 2007K. Lee By introducing a titanium oxide (TiOx) layer between the active layer and the aluminum cathode in polymer-based electronic devices (see figure), devices with excellent air stability and with enhanced performance are demonstrated. The TiOx layer acts as a shielding and scavenging layer that prevents the intrusion of oxygen and humidity into the electronically active polymers, thereby improving the lifetime of unpackaged devices exposed to air by nearly two orders of magnitude. [source] Air-Stable and Highly Active Dendritic Phosphine Oxide- Stabilized Palladium Nanoparticles: Preparation, Characterization and Applications in the Carbon-Carbon Bond Formation and Hydrogenation ReactionsADVANCED SYNTHESIS & CATALYSIS (PREVIOUSLY: JOURNAL FUER PRAKTISCHE CHEMIE), Issue 6 2008Lei Wu Abstract Dendrimer-stabilized palladium nanoparticles were formed in the reduction of palldium bis(acetylacetonate) [Pd(acac)2] in the presence of phosphine dendrimer ligands using hydrogen in tetrahydrofuran. The resulting Pd nanoparticles were characterized by TEM, 31P,NMR and 31P MAS NMR. The results indicated that the dendritic phosphine ligands were oxidized to phosphine oxides. These dendrimer-stabilized Pd nanoparticles were demonstrated to be efficient catalysts for Suzuki and Stille coupling reactions and hydrogenations. The dendritic wedges served as a stabilizer for keeping the nanoparticles from aggregating, and as a vehicle for facilitating the separation and/or the recycling of the Pd catalyst. In the case of the Suzuki coupling reaction, these Pd nanoparticles exhibited high catalytic efficiency (TON up to 65,000) and air stability as compared with the commonly used homogeneous catalyst tetrakis(triphenylphosphine)palladium [Pd(PPh3)4]. In addition, the results obtained from the bulky dendritic substrate suggest that the Pd nanoparticles might act as reservoir of catalytically active species, and that the reaction is actually catalyzed by the soluble Pd(0) and/or Pd(II) species leached from the nanoparticle surface. [source] Field-effect transistors based on PPV derivatives as a semiconducting layerJOURNAL OF POLYMER SCIENCE (IN TWO SECTIONS), Issue 1 2009Woo-Hyung Lee Abstract A series of modified thiophene groups containing PPV-based semiconducting materials, poly[(2,5-bis(octyloxy)-1,4-phenylenevinylene)-alt-(2,2,bithienylenevinylene)] (PPBT), poly[(2,5-bis(octyloxy)-1,4-phenylenevinylene)-alt-(5,5-thiostilylenevinylene)] (PPTVT), have been synthesized through a Horner coupling reaction. From the FTIR and 1H NMR spectroscopy, the configuration of the vinylene groups in the polymers was all trans (E) geometry. The weight-average molecular weights (Mw) of PPBT and PPTVT were found to be 11,700 and 11,800, with polydispersity indices of 2.51 and 2.53, respectively. PPBT and PPTVT thin films exhibit UV,visible absorption maxima at 538 and 558 nm, respectively, and the strong absorption shoulder peaks at 578 and 602 nm, respectively. Solution processed field-effect transistors (FET) fabricated using all the polymers showed p -type OTFT characteristics. The field-effect mobility of the PPTVT was obtained up to 2.3 × 10,3 cm2 V,1 s,1, an on/off ratio of 1.0 × 105 with ambient air stability. Studies of the atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis of the polymer thin films revealed that all the polymers were amorphous structure. The greater planarity and rigidity of PPTVT compared to PPBT results in elongation of conjugation length and better ,,, stacking of polymer chains in amorphous region, which leads to improved FET performance. © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 111,120, 2009 [source] | ||||||||||