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Emitting Devices (emitting + device)
Kinds of Emitting Devices Selected AbstractsFiber Shaped Light Emitting Device,ADVANCED MATERIALS, Issue 22 2007B. O'Connor A fiber based organic light emitting device (OLED) is demonstrated. Electrically, the device performs similarly to planar analogs, but unlike the planar devices, the fiber OLED exhibits an emission spectrum that is independent of the observation angle. This property may find application in OLED structures for display and lighting applications. The flexible fiber geometry potentially allows for new low cost manufacturing approaches. [source] Book Review: Organic Light Emitting Devices.ADVANCED MATERIALS, Issue 8 2007By Klaus Mullen, Ullrich Scherf (Eds.). No abstract is available for this article. [source] Fiber Shaped Light Emitting Device,ADVANCED MATERIALS, Issue 22 2007B. O'Connor A fiber based organic light emitting device (OLED) is demonstrated. Electrically, the device performs similarly to planar analogs, but unlike the planar devices, the fiber OLED exhibits an emission spectrum that is independent of the observation angle. This property may find application in OLED structures for display and lighting applications. The flexible fiber geometry potentially allows for new low cost manufacturing approaches. [source] Highly Emitting Neutral Dinuclear Rhenium Complexes as Phosphorescent Dopants for Electroluminescent DevicesADVANCED FUNCTIONAL MATERIALS, Issue 16 2009Matteo Mauro Abstract A series of neutral, dinuclear, luminescent rhenium(I) complexes suitable for phosphorescent organic light emitting devices (OLEDs) is reported. These compounds, of general formula [Re2(µ -Cl)2(CO)6(µ -1,2-diazine)], contain diazines bearing alkyl groups in one or in both the , positions. Their electrochemical and photophysical properties are presented, as well as a combined density functional and time-dependent density functional study of their geometry, relative stability and electronic structure. The complexes show intense green/yellow emissions in toluene solution and in the solid state and some of the complexes possess high emission quantum yields (,,=,0.18,0.22 for the derivatives with disubstituted diazines). In butyronitrile glass, at 77,K, due to the charge transfer character of the lowest (emitting) excited state, strong blue shift of the emission is observed, accompanied by a strong increase in the lifetime values. The highest-performing emitting complex, containing cyclopentapyridazine as ligand, is tested in a polymer-based light-emitting device, with poly(9-vinylcarbazole) as matrix, as well as in a device obtained by vacuum sublimation of the complex in the 2,7-bis(diphenylphosphine oxide)-9-(9-phenylcarbazol-3-yl)-9-phenylfluorene (PCF) matrix. This represents the first example of devices obtained with a rhenium complex which can be sublimed and is solution processable. Furthermore, the emission is the bluest ever reported for electrogenerated luminescence for rhenium complexes. [source] Doping of the Metal Oxide Nanostructure and its Influence in Organic ElectronicsADVANCED FUNCTIONAL MATERIALS, Issue 8 2009Mi-Hyae Park Abstract Synthesizing metal oxides through the sol,gel process provides a convenient way for forming a nanostructured layer in wide band gap semiconductors. In this paper, a unique method of introducing dopants into the metal oxide semiconductor is presented. The doped TiO2 is prepared by adding a Cs2CO3 solution to a nanocrystalline TiO2 solution that is synthesized via a non-hydrolytic sol,gel process. The properties of the TiO2:Cs layer are investigated and the results show stable nanostructure morphology. In addition to providing morphological stability, Cs in TiO2 also gives rise to a more desirable work function for charge transport in organic electronics. Polymer solar cells based on the poly(3-hexylthiophene) (P3HT): methanofullerene (PC70BM) system with the addition of a TiO2:Cs interfacial layer exhibit excellent characteristics with a power conversion efficiency of up to 4.2%. The improved device performance is attributed to an improved polymer/metal contact, more efficient electron extraction, and better hole blocking properties. The effectiveness of this unique functionality also extends to polymer light emitting devices, where a lower driving voltage, improved efficiency, and extended lifetime are demonstrated. [source] Exploiting a Dual-Fluorescence Process in Fluorene,Dibenzothiophene- S,S -dioxideCo-Polymers to Give Efficient Single Polymer LEDs with Broadened EmissionADVANCED FUNCTIONAL MATERIALS, Issue 4 2009Simon M. King Abstract A description of the synthesis of random (9,9-dioctylfluorene-2,7-diyl),(dibenzothiophene- S,S -dioxide-3,7-diyl) co-polymers (p(F-S)x) by palladium-catalyzed Suzuki cross-coupling polymerization where the feed ratio of the latter is varied from 2 to 30,mol % (i.e., x,=,2,30) is given. Polymer light emitting devices are fabricated with the configuration indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid)/p(F,S)x/Ba/Al. The device external quantum efficiency increased as the ratio of the S co-monomer was increased, up to a maximum of 1.3% at 100,mA cm,2 for p(F-S)30 and a brightness of 3 770,cd m,2 (at 10,V). The S units impart improved electron injection, more balanced mobilities, and markedly improved device performance compared to poly(9,9-dioctylfluorene) under similar conditions. These co-polymers display broad emission, observed as greenish-white light, which arises from dual fluorescence, viz. both local excited states and charge transfer states. Utilizing dual emission can reduce problems associated with Förster energy transfer from high-energy to-low energy excited states. [source] The Influence of UV Irradiation on Ketonic Defect Emission in Fluorene-Based Copolymers,ADVANCED FUNCTIONAL MATERIALS, Issue 17 2008Horst Scheiber Abstract The influence of UV irradiation in inert atmosphere on the emission spectrum of fluorenone containing poly[9,9-bis(2-ethyl)hexylfluorene] (PF2/6) has been investigated by means of optical absorption, photoluminescence (PL) and Fourier transform infrared (FTIR) spectroscopy. It is shown that a substantial reduction of green emission arising from ketonic defect sites can be achieved by irradiation of thin films with UV light. This is found to be accompanied by partial cross-linking of the films. FTIR measurements show no reduction of the C=O stretching mode upon irradiation, and, moreover, the degree of cross-linking does not scale with the relative fluorenone content (0.1, 0.5, and 5%). Therefore, the reduced emission intensity in the green spectral region is rather associated with the occurrence of interruptions in the polymer backbone, which reduce the effective conjugation length and subsequently inhibit the energy transfer onto the ketonic defect sites. The found results enabled us to build organic light emitting devices (OLEDs) that can be structured by selective illumination of the emitting layer with an intense UV light source. This method allows for the fabrication of rather efficient (2000,cd,m,2 at 7,V) two-color OLEDs. [source] High Definition Digital Fabrication of Active Organic Devices by Molecular Jet Printing,ADVANCED FUNCTIONAL MATERIALS, Issue 15 2007J. Chen Abstract We introduce a high resolution molecular jet (MoJet) printing technique for vacuum deposition of evaporated thin films and apply it to fabrication of 30,,m pixelated (800,ppi) molecular organic light emitting devices (OLEDs) based on aluminum tris(8-hydroxyquinoline) (Alq3) and fabrication of narrow channel (15,,m) organic field effect transistors (OFETs) with pentacene channel and silver contacts. Patterned printing of both organic and metal films is demonstrated, with the operating properties of MoJet-printed OLEDs and OFETs shown to be comparable to the performance of devices fabricated by conventional evaporative deposition through a metal stencil. We show that the MoJet printing technique is reconfigurable for digital fabrication of arbitrary patterns with multiple material sets and high print accuracy (of better than 5,,m), and scalable to fabrication on large area substrates. Analogous to the concept of "drop-on-demand" in Inkjet printing technology, MoJet printing is a "flux-on-demand" process and we show it capable of fabricating multi-layer stacked film structures, as needed for engineered organic devices. [source] Theoretical studies on the electronic and optical properties of two new alternating fluorene/carbazole copolymersJOURNAL OF COMPUTATIONAL CHEMISTRY, Issue 10 2005Li Yang Abstract Poly(fluorene)-type materials are widely used in polymer-based emitting devices. During operation there appears, however, an additional emission peak at around 2.3 eV, leading to both a color instability and reduced efficiency. The incorporation of the carbazole units has been proven to efficiently suppress the keto defect emission. In this contribution, we apply quantum-chemical techniques to investigate two series of alternating fluorene/carbazole oligomers and copolymers poly[2,7-(N-(2-methyl)-carbazole)- co - alt -2,7-m(9,9-dimethylfluorene)], namely, PFmCz (m = 1,2) and gain a detailed understanding of the influence of carbazole units on the electronic and optical properties of fluorene derivatives. The electronic properties of the neutral molecules, HOMO-LUMO gaps (,H-L), in addition to the positive and negative ions, are studied using B3LYP functional. The lowest excitation energies (Egs) and the maximal absorption wavelength ,abs of PFmCz (m = 1,2) are studied, employing the time-dependent density functional theory (TD-DFT). The properties of the two copolymers, such as ,H-L, Eg, IPs, and EAs were obtained by extrapolating those of the oligomers to the inverse chain length equal to zero (1/n = 0). The outcomes showed that the carbazole unit is a good electron-donating moiety for electronic materials, and the incorporation of carbazole into the polyfluorene (PF) backbone resulted in a broadened energy gap and a blue shift of both the absorption and photoluminescence emission peaks. Most importantly, the HOMO energies of PF1Cz and PF2Cz are both a higher average (0.4 eV) than polyfluorene (PF), which directly results in the decreasing of IPs of about 0.2 eV more than PF, indicating that the carbazole units have significantly improved the hole injection properties of the copolymers. In addition, the energy gap tends to broaden and the absorption and emission peaks are gradually blue-shifted to shorter wavelengths with an increase in the carbazole content in the copolymers. This is due to the interruption of the longer conjugation length of the backbone in the (F1Cz)n series. © 2005 Wiley Periodicals, Inc. J Comput Chem 26: 969,979, 2005 [source] Poly(methyl methacrylate) copolymers containing pendant carbazole and oxadiazole moieties for applications in single-layer organic light emitting devicesJOURNAL OF POLYMER SCIENCE (IN TWO SECTIONS), Issue 23 2008David D. Evanoff Jr. Abstract Methyl methacrylate derived monomers functionalized with pendant carbazole and oxadiazole moieties were synthesized and could be copolymerized to form a random copolymer. The glass transition temperature of the copolymers could be predicted with a Fox equation and ranged from 140 to 191 °C. The photoluminescent characteristics of the copolymers, both in solution and in solid films, exhibited emission that was a combination of sharp and broad peaks, suggestive of monomeric and chromophore aggregation emission. These trends were also apparent in the electroluminescent response of the copolymers, where the appearance of an electromer emission was evident and was tentatively assigned to the carbazole moieties. © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: 7882,7897, 2008 [source] FHSS optical wireless transceiver for short range low-speed indoor sensor interconnectionMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 11 2006F. Delgado Abstract Experimental and simulation results from the operation of a prototype of wireless indoor optical transceiver based on frequency hopping techniques are presented. We choose spread spectrum techniques, as it allows multiple simultaneous accesses and also increases the robustness of the system against multipath-induced distortion. It also reduces the effect of narrowband interference, as could be low-frequency optical noise from fluorescence or incandescence lamps. FHSS techniques also allow coexistence with IrDA or remote control emitting devices without causing of suffering interferences. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 2193,2197, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21889 [source] Recent progress of nitride-based light emitting devicesPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2003T. Mukai Abstract We review the recent progress of nitride-based light-emitting diodes (LEDs) and discuss the relation between dislocation density and quantum efficiency. We also discuss how to improve the external quantum efficiency of nitride-based LEDs. Secondly, the group-III nitride laser diodes (LDs), which emit from near-ultraviolet to pure-blue, are reviewed. Reducing threading dislocations can increase the lifetime of nitride LDs. Using the epitaxial lateral overgrowth technique, a dislocations density of the order of 105 cm,2 has been obtained. The relation between the lifetime of nitride LDs and the density of dislocations is discussed. Finally, near-ultraviolet LDs and pure-blue LDs are described. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Wishful physics , some common misconceptions about InGaNPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 3 2003K. P. O'Donnell Abstract All III,N visible light emitting devices contain ultrathin active layers of InGaN. Although this material has been widely studied during the last ten years or so, opinion is still divided as to its nature. Most researchers would agree with the proposition that III,nitride "alloys" are a mess, at least when compared with analogous III,As materials. It may be further argued that the quality of InGaN samples is at present too variable to allow general statements to be made about the material. We repudiate this misconception. The similarities between luminescent InGaN samples from different laboratories outweigh the differences. Any differences that do occur can be confidently accounted for, in terms of a peculiar growth habit of III,nitrides. We also briefly discuss the status of accidental InN quantum dots. [source] Measuring carrier mobility in conventional multilayer organic light emitting devices by delayed exciton generationPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 5 2008S. Reineke Abstract The authors present an alternative method for the determination of the charge carrier mobility of organic thin films. In contrast to known methods like space charge limited current, field effect transistor and time of flight approaches, we determine the charge carrier mobility of a mixed film, serving as emission layer, within the conventional multilayer device architecture. We make use of a strong delayed generation feature in the electroluminescent decay, following a short voltage pump pulse in a time-resolved set-up. Taking into account the preferentially electron transporting properties of the film, the mobility of a N,N ,-di(naphthalen-2-yl)- N,N ,-diphenyl-benzidine (NPB):tris(1-phenylisoquinoline) iridium [Ir(piq)3] mixed film is found to be on the order of 10,5 cm2 (Vs),1. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Role of bathocuproine as hole-blocking and electron-transporting layer in organic light emitting devicesPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 3-4 2010Reni Tomova Abstract In this paper we present our results concerning the role of 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (bathocuproine, BCP) in OLED structures with emissive layer of Tris-(8-hydroxyquinoline) aluminum (Alq3). It is established that instead of the higher working voltage of devices with bathocuproine their current efficiency significantly increased. This higher efficiency indicates strong hole-blocking nature of bathocuproine (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Investigation of defects in organic semiconductors by charge based Deep Level Transient Spectroscopy (Q-DLTS)PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 8 2009T. P. Nguyen Abstract We report the results of measurements of traps in light emitting devices using a new derivative of poly(phenylene vinylene) (PPV) as an active material by the charge based Deep Level Transient Spectroscopy (Q-DLTS) technique. Diodes of structure Indium Tin Oxide (ITO)/PEDOT:PSS/poly(2-ethylhexyl)surfanyl-5-methoxy phenylene vinylene (MEH-S-PPV)/M with M = Al and M = Ca/Al were investigated by measurements of current-voltage-luminance characteristics. From analysis of these characteristics, evidence of charge trapping in devices was demonstrated. The trap parameters were then determined from Q-DLTS measurements, which were carried out on the samples as a function of the charging time, the applied voltage and the temperature. Five trap levels of activation energy in the range [0.3-0.6 eV] and of density of order of 1017 cm,3 were identified in diodes with Ca/Al cathode. Electron (one level) and hole (four levels) traps were then clearly distinguished by performing measurements in hole-only devices. Trapping processes are discussed and tentatively proposed to performance of the light emitting diodes studied. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Optical properties and modal gain of InGaN quantum dot stacksPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S2 2009Joachim Kalden Abstract We present investigations of the optical properties of stacked InGaN quantum dot layers and demonstrate their advantage over single quantum dot layer structures. Measurements were performed on structures containing a single layer with quantum dots or threefold stacked quantum dot layers, respectively. A superlinear increase of the quantum dot related photoluminescence is detected with increasing number of quantum dot layers while other relevant GaN related spectral features are much less intensive when compared to the photoluminescence of a single quantum dot layer. The quantum dot character of the active material is verified by microphotoluminescence experiments at different temperatures. For the possible integration within optical devices in the future the threshold power density was investigated as well as the modal gain by using the variable stripe length method. As the threshold is 670 kW/cm2 at 13 K, the modal gain maximum is at 50 cm,1. In contrast to these limited total values, the modal gain per quantum dot is as high as 10,9cm,1, being comparable to the IIVI and III-As compounds. These results are a promising first step towards bright low threshold InGaN quantum dot based light emitting devices in the near future (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Elastic constants of aluminum nitridePHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 1 2007M. Kazan Abstract We report on the application of Brillouin spectroscopy as an approach to non-destructive optical characterization of the elastic constants of semiconductors with the wurtzite symmetry. Three different configurations were used to achieve a complete determination of the elastic stiffness constants of bulk AlN substrates grown by the Physical Vapor Transport (PVT) method. The scattering diagrams of these three configurations are presented showing the geometrical arrangements necessary to observe all the elastic stiffness constants for the partially nontransparent wurtzite type of the crystal structure. Because aluminum nitride (AlN) is a suitable material for the fabrication of light emitting devices, the characterization of its elastic constants was carried out very precisely to provide a reliable data which can be used for the determination of residual stress arising during the growth of AlN thin films or wide band gap semiconductor thin films on substrates of AlN. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Preface: phys. stat. sol. (c) 1/10PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 10 2004Eun-Kyung Suh The Fifth International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004) was held in Gyeongju, Korea from 15,19 March 2004. Gyeongju, the ancient capital of the thousand-year Silla kingdom (57 B.C. to 935 A.D.) provided additional pleasure to the participants as an exceptional open-air museum with antique treasures scattered all around the city. During the last decade we have witnessed remarkable developments in wide-gap semiconductors and light emitting devices in the spectral range from the visible to deep UV. The purpose of the Symposium was to provide a forum for intensive discussion on the issues and main progress especially in optoelectronic devices, material growth and characterization, and quantum structures of wide bandgap semiconductors. A total of 243 papers including 220 contributed and 23 invited ones were presented and discussed by 487 participants from 17 countries world-wide. Among them, 154 manuscripts were submitted and reviewed by the usual evaluation process of physica status solidi. Some were rejected or withdrawn, and finally 139 papers are published in the special issues of physica status solidi (a), (b), and (c). We gratefully acknowledge the referees for their careful review. The papers are grouped into 7 categories. The subheadings and the number of papers in each are as follows: Optoelectronic devices, 43; Growth and characterization, 45; Nano and quantum structures, 21; Contacts, 8; Zinc oxide, 9; Indium nitride and indium rich InGaN, 6; Others, 7. The special session of the Symposium, "The LED Highlight", designed partially to meet the challenging targets of the technology, i.e., energy savings and clean environment preservation, drew much attention and is edited as a special coloured section in this issue. The next symposium is scheduled for Montpellier, France, in 2006. We wish the organizers of that symposium the best of luck and hope to see all of the ISBLLED-2004 participants again at ISBLLED-2006. ISBLLED-2004 was sponsored by The Research Society for the Wide-gap Semiconductors, Korean Physical Society, Office of Naval Research, Korea Science and Engineering Foundation, Korea Research Foundation, Korea Association for Photonics Industry Development, Asian Office of Aerospace Research and Development, and Korea Photonics Technology Institute. We would like to thank Ms. E. S. Hwang for her devotion to the preparation and the Proceedings of the symposium including the manuscript handling for publication. [source] Tris-Cyclometalated Iridium(III) Complexes of Carbazole(fluorenyl)pyridine Ligands: Synthesis, Redox and Photophysical Properties, and Electrophosphorescent Light-Emitting DiodesCHEMISTRY - A EUROPEAN JOURNAL, Issue 5 2007Sylvia Bettington Dr. Abstract Using ligands synthesized by Suzuki cross-coupling methodology, new phosphorescent homoleptic tris-cyclometalated complexes have been obtained, namely fac -[Ir(Cz-2-FlnPy)3] (1,d,f) and fac -[Ir(Cz-3-FlnPy)3] (2,d,f), which are solution-processible triplet emitters (Cz denotes N -hexylcarbazole, n is the number of 9,9,-dihexylfluorene (Fl) units (n=0,1,2) and Py is pyridine). In all cases, Py and Fl are substituted at the 2- and 2,7-positions, respectively, and Cz moieties are substituted by either Py or Fl at the 2- or 3-positions, in series 1 and 2, respectively. The oxidation potential of 1,d studied by cyclic voltammetry (=0.14,V, versus Ag/AgNO3, CH2Cl2) is less positive (i.e. raised HOMO level) compared to that of the isomer 2,d (=0.30,V), where the Cz-nitrogen is meta to the Ir center. Ligand-centered oxidations occur at more positive potentials, leading to 7+ oxidation states with good chemical reversibility and electrochemical quasi-reversibility, for example, for 2,f =0.45 (1e), 0.95 (3e), 1.24,V (3e). Striking differences are seen in the solution-state photophysical data between complexes [Ir(Cz-2-Py)3] (1,d) and [Ir(Cz-3-Py)3] (2,d), in which the Cz moiety is bonded directly to the metal center: for the latter there is an 85,nm blue-shift in emission, a decrease in the luminescence lifetime and an increase in the PLQY value. Organic light emitting devices were made by spin-coating using polyspirobifluorene:bis(triphenyl)diamine (PSBF:TAD) copolymer as host and the complexes 1,d or 2,d as dopants. Turn-on voltages are low (3,4,V). With 1,d orange light is emitted at ,max=590,nm with an EQE of 1.3,% (at 7.5,mA,cm,2) and an emission intensity (luminance) of 4354,cd,m,2 (at 267,mA,m,2). The green emission from 2,d devices (,max=500,nm) is due to the reduced electron-donating ability of the carbazole unit in 2,d. Recording the EL spectra of the 1,d device at 6,V (current density, 100,mA,cm,2) established that the time to half brightness was about 9,h under continuous operation with no change in the spectral profile, confirming the high chemical stability of the complex. [source] | ||||||||||||||||