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Electronic Conduction (electronic + conduction)
Selected AbstractsOptical and electrical studies on spray deposited ZnO thin filmsCRYSTAL RESEARCH AND TECHNOLOGY, Issue 7 2007P. P. Sahay Abstract ZnO thin films were prepared by spray pyrolytic decomposition of zinc acetate onto a glass substrate. These films were analyzed for the optical and electrical properties. Optical studies show that in these films the electronic transition is of the direct transition type. The optical energy gap for the films of different thicknesses is estimated to be in the range 2.98 , 3.09 eV. Electrical studies indicate that the films exhibit thermally activated electronic conduction and the activation energies are found to be dependent on the film thickness. The complex impedance measurements were carried out over a wide range of frequencies at room temperature (300 K). All the impedance spectra contain only a single arc, but the arc has a non-zero intersection with the real axis in the high frequency region. Also, the arc has its centre lying below with the real axis which indicates the multirelaxation behavior of the films. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] High-Performance Air-Processed Polymer,Fullerene Bulk Heterojunction Solar CellsADVANCED FUNCTIONAL MATERIALS, Issue 22 2009Chang-Yong Nam Abstract High photovoltaic device performance is demonstrated in ambient-air-processed bulk heterojunction solar cells having an active blend layer of organic poly(3-hexylthiophene) (P3HT): [6,6]-phenyl-C61 -butyric acid methyl ester (PCBM), with power conversion efficiencies as high as 4.1%, which is comparable to state-of-the-art bulk heterojunction devices fabricated in air-free environments. High-resolution transmission electron microscopy is combined with detailed analysis of electronic carrier transport in order to quantitatively understand the effects of oxygen exposure and different thermal treatments on electronic conduction through the highly nanostructured active blend network. Improvement in photovoltaic device performance by suitable post-fabrication thermal processing results from the reduced oxygen charge trap density in the active blend layer and is consistent with a corresponding slight increase in thickness of an ,4,nm aluminum oxide hole-blocking layer present at the electron-collecting contact interface. [source] Endothelial cell growth on silicon modified hydrogenated amorphous carbon thin filmsJOURNAL OF BIOMEDICAL MATERIALS RESEARCH, Issue 1 2008A. A. Ogwu Abstract The biological response of human microvascular endothelial cells (HMEC-1) seeded on Si-DLC films and on control surfaces was evaluated in terms of initial cell enhancement, growth, and cytotoxicity. The microstructure of the films was characterised by Raman spectroscopy and X-ray photoelectron spectroscopy. The effect of changes in microstructure, surface energy, surface electronic state, and electronic conduction, on the biological response of the films to endothelial cells was investigated. Endothelial cell adhesion and growth was found to be affected by changes in the microstructure of the films induced by silicon doping and thermal annealing. We observed a significant statistical difference in endothelial cell count between the as-deposited DLC and Si-DLC films using the one sample t -test at a p -value of 0.05. We also found a statistically significant difference between the adhesion of HMEC films on DLC and Si-DLC films at various annealing temperatures using the one-way ANOVA F statistic test at p < 0.05 and the post-hoc Tukey test. One sample t -test at p < 0.05 of MTT-assay results showed the endothelial cells to be viable when seeded on DLC/Si-DLC films. We suspect that the increased adhesion of endothelial cells induced by increasing the amount of silicon in the Si-DLC films is associated with the development of a suitable surface energy due to silicon addition, which neither favored cell denaturing nor preferential water spreading before cellular attachment on the film surface. The presence of an external positively charged dipole on the Si-DLC films confirmed by our Kelvin probe measurements is also expected to enhance the adhesion of endothelial cells that are well known to carry a negative charge. The Si-DLC films investigated hold potential promise as coatings for haemocompatible artificial implants. © 2007 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 2008 [source] Enhanced Properties of Tin(IV) Oxide Based Materials by Field-Activated SinteringJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 6 2003Oana Scarlat The densification of SnO2 (0.9 mol),Sb2O3 (0.1 mol) solid solution without any additives was studied by conventional and field-activated sintering technique (FAST). FAST sintering achieved a relative density value of 92.4% at 1163 K for 10 min versus 61.3% in conventional sintering at 1273 K for 3 h. An abnormal reduction of the IR transmittance and a semiconductor defect structure with only one donor level in the SnO2 energy gap were noticed in the FAST-sintered as compared with the conventionally sintered Sn0.82Sb0.18O2 solid solution. A high charge carrier concentration (i.e., electronic conduction) was shown in the FAST-sintered sample by conductivity measurements and the negative values of the Seebeck coefficient. [source] | ||||||||||