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Electrical Transport Properties (electrical + transport_property)
Selected AbstractsChemInform Abstract: Compositional Control of Electrical Transport Properties in the New Series of Defect Thiospinels, Ga1-xGexV4S8-, (0 , x ,1).CHEMINFORM, Issue 2 2010Iwona Szkoda Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a "Full Text" option. The original article is trackable via the "References" option. [source] ChemInform Abstract: Structure and Electrical Transport Properties of the Ordered Skutterudites MGe1.5S1.5 (M: Co, Rh, Ir).CHEMINFORM, Issue 32 2008Paz Vaqueiro Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a "Full Text" option. The original article is trackable via the "References" option. [source] Solvothermal Synthesis and Electrical Transport Properties of Skutterudite CoSb3.CHEMINFORM, Issue 36 2006J. L. Mi Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF. [source] Electrical Transport Properties of USbSe and USbTe.CHEMINFORM, Issue 38 2005D. Kaczorowski Abstract For Abstract see ChemInform Abstract in Full Text. [source] Electrical transport properties of a single wall carbon nanotube networkPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 4 2009J. S. Hwang Abstract A single wall carbon nanotube (SWCNT) network is fabricated and its electronic transport properties are investigated. It shows a typical p-type field-effect-transistor (FET) behavior and nonlinearities in the source current-source bias characteristics. The network also exhibits incomplete turn-off and a small mobility. These characteristics are explained by the fact that the network is a mixture of metallic and semiconducting SWCNTs connecting with one another. Various cross junctions such as SWCNT (semiconducting)-SWCNT (semiconducting), SWCNT (semiconducting)-SWCNT (metallic) are the source of nonlinearities and the small mobility. Incomplete turn-off can be explained by the parallel conduction paths consisting of metallic SWCNTs which are insensitive to the gate bias. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Electrical transport properties of aliovalent cation-doped CeO2ASIA-PACIFIC JOURNAL OF CHEMICAL ENGINEERING, Issue 1 2009Mark C. Pearce Abstract We report the comparative electrical properties of monovalent (Na+), divalent (Ca2+, Sr2+), trivalent (In3+, La3+) and coupled substitution of divalent and trivalent (Ca2+ + Sm3+) cation-doped CeO2. The investigated samples were prepared by solid-state reaction (ceramic) using the corresponding metal oxides and salts in the temperature range 1000,1600 °C in air. Powder X-ray diffraction (PXRD), laser particle size analysis (LPSA), scanning electron microscopy (SEM), and ac impedance spectroscopy measurements were employed for structural, morphology, and electrical characterization. PXRD studies reveal the formation of single-phase cubic fluorite-type structures for all investigated samples except those doped with In3+. The variation of lattice parameters is consistent with ionic radii (IR) of the dopant metal ions, with the exception of Na+ -doped CeO2. Our attempt to substitute In3+ for Ce4+ in CeO2 using both ceramic and wet chemical methods was unsuccessful. Furthermore, diffraction peaks attributed to CeO2 and In2O3 were observed up to sintering conditions of 1600 °C. Among the single-phase compounds investigated, Ce0.85Ca0.05Sm0.1O1.9 exhibits the highest bulk conductivity of 1.3 × 10,3 S/cm at 500 °C with activation energy of 0.64 eV in air. The electrical conductivity data obtained for Ce0.85Ca0.05Sm0.1O1.9 in air and Ar were found to be very similar over the investigated temperature range, indicating the absence of p-electronic conduction in the high oxygen partial pressure (pO2) range which is consistent with literature reported on Sm-doped CeO2. Copyright © 2008 Curtin University of Technology and John Wiley & Sons, Ltd. [source] Coaxial Metal Nano-/Microcables with Isolating Sheath: Synthetic Methodology and Their Application as InterconnectsADVANCED MATERIALS, Issue 17 2010Min-Rui Gao Abstract Synthesis of coaxial nano-/microcables has been an intensive research subject due to their heterogeneous structures, tuneable properties, and important applications in nano-/micrometer-scale electronic and optoelectronic devices. Research on the fabrication of nanocables via solution strategies has made great progress in the past few years. In this Research News article, rapidly emerging new solution strategies such as hydrothermal carbonization (HTC) and synergistic soft,hard templates (SSHTs) are highlighted. Unique and flexible coaxial nano-/microcables synthesized by those methods have obvious advantages such as long-term stability and their electrical transport properties, compared with bare counterparts, suggesting that they are potential candidates as interconnects in the future. [source] Negative Thermal Expansion and Correlated Magnetic and Electrical Properties of Si-Doped Mn3GaN CompoundsJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 3 2010Ying Sun The negative thermal expansion (NTE) and correlated magnetic and electrical transport properties of Mn3GaxSi1,xN were investigated. For pure Mn3GaN, there is a large NTE effect corresponding to the antiferromagnetic to paramagnetic transition. Very interestingly, when partial Ga was replaced by Si, the NTE properties around the magnetic transition were changed. The NTE temperature range was broadened to ,T=148 K for Mn3Ga0.75Si0.25N and the linear thermal expansion coefficient was estimated as ,=,1.4 × 10,5 K,1 (272,420 K). Accordingly, the resistivity also showed a decrease from 327 to 395 K with temperature. With a further increasing Si content to x=0.5, the magnetic transition still occured, but the NTE effect did not appear. After careful observation, an anomaly was found at around 350 K in a,T, ,,T, and DSC curves of Mn3Ga0.5Si0.5N, respectively. This phenomenon strongly implies the close correlation among lattice, spin, and charge in this series materials. [source] Thermal conductivity reduction in fullerene-enriched p-type bismuth telluride compositesPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2010N. Gothard Abstract We present a systematic study of the effects of fullerene nanoinclusions upon a p-type bismuth,antimony,telluride matrix, where the ultimate goal is maximizing the figure of merit by reducing the thermal conductivity (TC). Nanocomposites consisting of a bismuth,telluride matrix with fullerene inclusions have been prepared both by mechanical mixing and ball milling, with the final consolidation in each case achieved by uniaxial hot pressing. A series of samples was produced with fullerene concentrations ranging from fractional levels to several molar percent, and the effects of the fullerene additions upon the resulting microstructure have been considered. Thermal and electrical transport properties have been measured from 10 to 300,K, and the data are discussed in light of the underlying physical mechanisms. [source] Effect of annealing temperature on the electrical transport properties of CaRuO3,, thin films directly deposited on the Si substratePHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 7 2007Hanjong Paik Abstract We investigate the effect of annealing temperature on the preferentially (110)-oriented CaRuO3,, (CRO) thin films directly prepared on Si(100) substrate by rf magnetron sputtering. Crystalline quality and electrical transport properties of the CRO thin films were modified by post-annealing treatment. It was obvious that 700 °C post-annealing brought about excellent metallic characteristics with the elevation of carrier concentration and mobility. From this result, we suggested that enhanced (110) orientation, and the ratio of chemical composition Ru4+/Ca2+ ion were responsible for the transport properties of CRO thin film. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Growth and properties of nanocrystalline diamond filmsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 13 2006Oliver A. Williams Abstract The aim of this paper is to summarise recent progress in the growth of small grain-sized Chemical Vapor Deposition (CVD) diamond often called nanocrystalline diamond, i.e., diamond with grains typically smaller than 500 nm. Nanocrystalline (NCD) and Ultrananocrystalline diamond (UNCD) films are new materials offering interesting applications to nanobioelectronics and electrochemistry. However NCD and UNCD thin films comprise of entirely different structures which is highlighted here in this paper. We discuss in detail the main differences in Raman spectra, optical properties and electrical transport properties. Finally we present a simple model of the conductivity mechanism in nitrogenated UNCD (N-UNCD) and boron doped NCD (B-NCD) films, and show the possibility of achieving the superconductive transition in B-NCD films. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Special issue: Physics of Organic SemiconductorsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 6 2004Wolfgang Brütting This special issue of physica status solidi (a) gives an overview of our present-day knowledge of the physics behind organic semiconductor devices, ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application in organic field-effect transistors, photovoltaic cells and organic light-emit-ting diodes. Guest Editor of the present issue is Wolfgang Brütting, professor at the University of Augsburg, where he leads a research group working on organic semiconductors, their physical and materials properties, and the understanding of the basic processes in these materials and devices. The cover picture is an angular plot of the anisotropy of the charge carrier mobility , in the a,b plane of a rubrene single crystal, probed on an elastomeric rubber stamp field-effect transistor device. The black and red squares correspond to the values of , extracted from the linear and saturation regimes of the transistor operation, respectively. More information can be found in the Review Article by R. W. I. de Boer et al. [1]. [source] Influence of Growth Temperature and Carrier Flux on the Structure and Transport Properties of Highly Oriented CrO2 on Al2O3 (0001),CHEMICAL VAPOR DEPOSITION, Issue 10 2007M. Sousa Abstract In this work we report on the structure and magnetic and electrical transport properties of CrO2 films deposited onto (0001) sapphire by atmospheric pressure (AP)CVD from a CrO3 precursor. Films are grown within a broad range of deposition temperatures, from 320 to 410,°C, and oxygen carrier gas flow rates of 50,500,sccm, showing that it is viable to grow highly oriented a -axis CrO2 films at temperatures as low as 330,°C i.e., 60,70,°C lower than is reported in published data for the same chemical system. Depending on the experimental conditions, growth kinetic regimes dominated either by surface reaction or by mass-transport mechanisms are identified. The growth of a Cr2O3 interfacial layer as an intrinsic feature of the deposition process is studied and discussed. Films synthesized at 330,°C keep the same high quality magnetic and transport properties as those deposited at higher temperatures. [source] | ||||||||||||||||