Home  About us  Contact
 

Electrical Transport (electrical + transport)

Distribution by Scientific Domains
Physics and Astronomy55%
Polymers and Materials Science44%

Terms modified by Electrical Transport

  • electrical transport property
    		•

    Selected Abstracts

    Effect of Contact Mode on the Electrical Transport and Field-Emission Performance of Individual Boron Nanowires

    ADVANCED FUNCTIONAL MATERIALS, Issue 12 2010
    Fei Liu
    Abstract Vapor,liquid,solid processing of boron nanowires (BNWs) can be carried out either using a bottom-up or top-down growth mode, which results in different contact modes between the nanowire and the substrate. The contact mode may strongly affect the electrical transport and field-emission performance of the individual boron nanowires grown on a Si substrate. The electrical transport and field-emission characteristics of individual boron nanowires of different contact modes are investigated in situ using a scanning electron microscope. The contact barriers are very distinct for the different contact modes. Moreover, the transition from a "contact-limited" to a "bulk-limited" field-emission (FE) process is demonstrated in nanoemitters for the first time, and the proposed improved metal,insulator,vacuum (MIV) model may better illustrate the nonlinear behavior of the Fowler-Nordheim (FN) plots in these nanoscale systems. Individual BNWs with different contact modes have a discrepancy in their emission stability and vacuum breakdown characteristics though they have similar aspect ratios, which suggests that their electrical transport and field-emission performance are closely related to their contact mode. Boron nanowires grown in the base-up mode have better field-emission performances and are more beneficial than those grown in the top-down mode for various device applications. [source]

    Electrical Transport and High-Performance Photoconductivity in Individual ZrS2 Nanobelts

    ADVANCED MATERIALS, Issue 37 2010
    Liang Li
    Individual ZrS2 -nanobelt field-effect transistors were fabricated using a photolithography process. Temperature-dependent electrical transport revealed different electrical conductivity mechanism at different working temperature regions. ZrS2 -nanobelt photodetectors demonstrated a high-performance visible-light photoconductivity. [source]

    Electrical transport in strained La0.7Ca0.3MnO3 films

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 1 2006
    V. Markovich
    Abstract Magnetotransport properties of La0.7Ca0.3MnO3 thin films deposited on (100) LaAlO3 substrate were investigated. Fine balance between the charge ordered insulating phase and ferromagnetic metallic phase results in a number of glassy features such as: significant hysteresis, memory effects and long-time resistivity relaxation at turning on and off of magnetic field. It was found that in the temperature range 10,220 K the resistance of thin film decreases significantly upon applying electric current and this effect cannot be explained by homogeneous Joule heating. The magnetotransport properties of the thin films are discussed in the frame of cross-coupling of charge, spin and strain. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Effect of Contact Mode on the Electrical Transport and Field-Emission Performance of Individual Boron Nanowires

    ADVANCED FUNCTIONAL MATERIALS, Issue 12 2010
    Fei Liu
    Abstract Vapor,liquid,solid processing of boron nanowires (BNWs) can be carried out either using a bottom-up or top-down growth mode, which results in different contact modes between the nanowire and the substrate. The contact mode may strongly affect the electrical transport and field-emission performance of the individual boron nanowires grown on a Si substrate. The electrical transport and field-emission characteristics of individual boron nanowires of different contact modes are investigated in situ using a scanning electron microscope. The contact barriers are very distinct for the different contact modes. Moreover, the transition from a "contact-limited" to a "bulk-limited" field-emission (FE) process is demonstrated in nanoemitters for the first time, and the proposed improved metal,insulator,vacuum (MIV) model may better illustrate the nonlinear behavior of the Fowler-Nordheim (FN) plots in these nanoscale systems. Individual BNWs with different contact modes have a discrepancy in their emission stability and vacuum breakdown characteristics though they have similar aspect ratios, which suggests that their electrical transport and field-emission performance are closely related to their contact mode. Boron nanowires grown in the base-up mode have better field-emission performances and are more beneficial than those grown in the top-down mode for various device applications. [source]

    Electrical Transport and High-Performance Photoconductivity in Individual ZrS2 Nanobelts

    ADVANCED MATERIALS, Issue 37 2010
    Liang Li
    Individual ZrS2 -nanobelt field-effect transistors were fabricated using a photolithography process. Temperature-dependent electrical transport revealed different electrical conductivity mechanism at different working temperature regions. ZrS2 -nanobelt photodetectors demonstrated a high-performance visible-light photoconductivity. [source]

    Influence of La doping on the properties of molybdenum perovskite Sr1,xLaxMoO3 (0 , x , 0.2)

    PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 6 2006
    S. B. Zhang
    Abstract The effects of La-doping on the structural, magnetic, electrical transport and specific-heat properties in 4d perovskites Sr1,xLaxMoO3 (0 , x , 0.2) have been investigated. The substitution of Sr ions by La ions does not change the space group of the samples, but increases the lattice parameter a (Å). The resistivity , and magnetic susceptibility , decrease monotonously with the increase of x , while the electronic specific heat coefficient ,e increases. The resistivity of all samples shows a T2 dependence in the low-temperature region of 2 K < T < 125 K and a T dependence in the high-temperature range of 130 K < T < 350 K, related to the electron,electron (e,e) and electron,phonon (e,ph) scattering, respectively. The specific-heat data agrees with the classical Dulong,Petit phonon specific heat, Ccl = 3kBrNA = 124.7 J/mol K at high temperatures and Cp(T )/T = ,e + ,pT2 at low temperatures. These behaviors can be explained according to the decrease of the density of states (DOS) at the Fermi energy level (EF), N (EF). (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Suppression of superconductivity and normal state electrical transport in Y1,xPrxBaSrCu3O7,, and Y1,xPrxBa2Cu3O7,, systems

    PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 4 2004
    Anurag Gupta
    Abstract The structure, normal state electrical transport and superconducting critical temperatures (Tc) of Y1,xPrxBaSrCu3O7,, (i.e., Y(Pr)-1113) and Y1,xPrxBa2Cu3O7,, (i.e., Y(Pr)-123) systems, with 0.00 , x , 1.00 and 6.93 , 7 , , , 6.95, have been investigated. Residual resistivity (,0) and resistivity slope ((d,/dT)cc) corresponding to the linear , - T region are determined from the normal state resistivity measurements. It is found that an increase in ,0 and (d,/dT)cc correlates with a decrease and enhancement of Tc(x), respectively. Interestingly, in both the systems, the destruction of superconductivity seems to occur at the same value of x where (d,/dT)cc tends to zero. The observed correlations suggest a possible mechanism of superconductivity in these systems, which is discussed. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Influence of non-random incorporation of Mn ions on the magnetotransport properties of Ga1,xMnxAs alloys

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 3 2008
    C. Michel
    Abstract We study theoretically the influence of a spatially nonrandom incorporation of Mn ions on the magnetotransport in paramagnetic Ga1,xMnxAs alloys. Such a nonrandomness may be introduced during post-growth annealing treatment. We use a resistor-network model for describing the electrical transport of this disordered semiconductor system as a function of temperature and external magnetic field. The model is founded on classical semiconductor band-transport and neglects many-body interactions. The peculiarities of paramagnetic dilute magnetic semiconductors, in particular, the magnetic-field induced changes of the density of states, the broad acceptor-energy distribution, and the interplay of magnetic field independent disorder (due to the alloying of GaAs with Mn) and magnetic field dependent disorder (due to the the Giant Zeeman splitting) are accounted for in a mean-field fashion. We have previously shown that this empirical transport model based on reasonable assumptions and realistic material parameters yields a satisfactory quantitative description of the experimentally obtained temperature and magnetic-field dependence of the resistivity of Ga0.98Mn0.02As samples annealed at different temperatures. For Ga1,xMnxAs alloys annealed at temperatures above 500 °C where structural changes lead to the formation of MnAs clusters, the transport is dominated by the paramagnetic GaAs:Mn host matrix as the cluster density is below the percolation threshold. We will show that in this situation the transport results can only be explained accounting for a nonrandom Mn distribution. Thus the analysis shown here provides further understanding of the annealing-induced changes of the transport properties in dilute magnetic III-Mn-V semiconductors. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]