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Device Technology (device + technology)

Distribution by Scientific Domains
Physics and Astronomy33%

Selected Abstracts

Generation of quantum-entangled twin photons by waveguide nonlinear-optic devices

LASER & PHOTONICS REVIEWS, Issue 4 2009
T. Suhara
Abstract This paper reviews the quasi-phase-matched (QPM) waveguide nonlinear-optic device technologies for generation of quantum-entangled twin photons indispensable for quantum-information techniques. After a brief introduction to the concept of entanglement, quantum theory analysis of twin-photon generation (TPG) is outlined to clarify the properties of twin photons. Then, methods for entangled-photon generation are discussed. Practical design and theoretical performances of LiNbO3 waveguide QPM TPG devices, as well as the fabrication techniques, are described. Finally, experimental demonstrations of polarization-entangled twin-photon generation by waveguide Type-I and Type-II QPM TPG devices are presented. [source]

Vertical double-gate MOSFET device technology

ELECTRONICS & COMMUNICATIONS IN JAPAN, Issue 1 2008
Meishoku Masahara
Abstract Silicon device technology is facing several difficulties. Especially, explosion of power consumption due to short-channel effects (SCEs) becomes the biggest issue in further device scaling down. Fortunately, double-gate (DG) MOSFETs have promising potential to overcome this obstacle. The DG-MOSFET is recognized to be the most scalable MOSFET for its high SCE immunity. In addition, independent DG-MOSFET (4T-DG-MOSFET) has great advantage to enable the threshold voltage control for the flexible power management. Through this work, we have realized ideal DG-MOSFETs using newly developed vertical DG-MOSFET device technology. This article examines the effectiveness of the vertical DG-MOSFETs in future high-performance and ultralow-power CMOS circuits. © 2008 Wiley Periodicals, Inc. Electron Comm Jpn, 91(1): 46, 51, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.10021 [source]

Ferroelectric Response and Induced Biaxiality in the Nematic Phase of Bent-Core Mesogens

ADVANCED FUNCTIONAL MATERIALS, Issue 16 2009
Oriano Francescangeli
Abstract The still undiscovered fluid ferroelectric nematic phase is expected to exhibit a much faster and easier response to an external electric field compared to conventional ferroelectric smectic liquid crystals; therefore, the discovery of such a phase could open new avenues in electro-optic device technology. Here, experimental evidence of a ferroelectric response to a switching electric field in a low molar mass nematic liquid crystal is reported and connected with field-induced biaxiality. The fluid is made of bent-core polar molecules and is nematic over a range of 120,°C. Combining repolarization current measurements, electro-optical characterizations, X-ray diffraction and computer simulations, ferroelectric switching is demonstrated and it is concluded that the response is due to field-induced reorganization of polar cybotactic groups within the nematic phase. This work represents significant progress toward the realization of ferroelectric fluids that can be aligned at command with a simple electric field. [source]

Changing Trends in Pacemaker and Implantable Cardioverter Defibrillator Generator Advisories

PACING AND CLINICAL ELECTROPHYSIOLOGY, Issue 12 2002
WILLIAM H. MAISEL
MAISEL, W.H., et al.: Changing Trends in Pacemaker and Implantable Cardioverter Defibrillator Generator Advisories. Pacemaker and implantable cardioverter defibrillator (ICD) generator recalls and safety alerts (advisories) occur frequently, affect many patients, and are increasing in number and rate. It is unknown if advances in device technology have been accompanied by changing patterns of device advisory type. Weekly FDA Enforcement Reports from January 1991 to December 2000 were analyzed to identify all advisories involving pacemaker and ICD generators. This article represents additional analysis of previously cited advisories and does not contain additional recalls or safety alerts over those that have been previously reported. The 29 advisories (affecting 159,061 devices) from the early 1990s (1991,1995) were compared to the 23 advisories (affecting 364,084 devices) from the late 1990s (1996,2000). While the annual number of device advisories did not change significantly, ICD advisories became more frequent and a three-fold increase in the number of devices affected per advisory was observed. The number of devices affected by hardware advisories increased three-fold, due primarily to a 700-fold increase in electrical/circuitry abnormalities and a 20-fold increase in potential battery/capacitor malfunctions. Other types of hardware abnormalities (defects in the device header, hermetic seal, etc.) became less common. The number of devices recalled due to firmware (computer programming) abnormalities more than doubled. The remarkable technological advances in pacemaker and ICD therapy have been accompanied by changing patterns of device advisory type. Accurate, timely physician and patient notification systems, and routine pacemaker and ICD patient follow-up continue to be of paramount importance. [source]

Effects of oxygen ion implantation in spray-pyrolyzed ZnO thin films

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 5 2006
K. P. Vijayakumar
Abstract ZnO thin films, prepared using the chemical spray pyrolysis technique, were implanted using 100 keV O+ ions. Both pristine and ion-implanted samples were characterized using X-ray diffraction, optical absorption, electrical resistivity measurements, thermally stimulated current measurements and photoluminescence. Samples retained their crystallinity even after irradiation at a fluence of ,1015 ions/cm2. However, at a still higher fluence of 2 × 1016 ions/cm2, the films became totally amorphous. The optical absorption edge remained unaffected by implantation and optical absorption spectra indicated two levels at 460 and 510 nm. These were attributed to defect levels corresponding to zinc vacancies (VZn) and oxygen antisites (OZn), respectively. Pristine samples had a broad photoluminescence emission centred at 517 nm, which was depleted on implantation. In the case of implanted samples, two additional emissions appeared at 425 and 590 nm. These levels were identified as due to zinc vacancies (VZn) and oxygen vacancies (VO), respectively. The electrical resistivity of implanted samples was much higher than that of pristine, while photosensitivity decreased to a very low value on implantation. This can be utilized in semiconductor device technology for interdevice isolation. Hall measurements showed a marked decrease in mobility due to ion implantation, while carrier concentration slightly increased. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]