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Device Reliability (device + reliability)
Selected AbstractsReliability of capacitive RF MEMS switches at high and low temperaturesINTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 4 2004Yong Zhu Abstract Some applications of RF MEMS switches, such as aircraft condition monitoring and distributed satellite communication, present a unique challenge for device design and reliability. This article examines these switches when operational temperatures in the range ,60°C to 100°C are envisioned. The basic operation of a capacitive MEMS switch is described and two tools for examining device reliability, modeling, and on-chip experimentation, are discussed in the case of capacitive MEMS switches. 1D, 2D, and 3D models are presented with emphasis on 3D coupled-field finite-element analysis, including temperature effects. Results and findings from the 3D simulations are reported. In particular, the advantages of employing corrugated membranes in the design of RF MEMS switches are assessed. Their performance in terms of reliability as a function of temperature is quantified. The effects of corrugation on the geometric parameters are discussed in the context of device-design optimization. In order to assess reliability experimentally, the M-test and the membrane deflection experiment (MDE) are reviewed due to their on-chip characteristic and simplicity. Ways in which these experimental/computational methodologies can be combined for identifying material properties and device performance is also highlighted. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14: 317,328, 2004. [source] Donation of explanted pacemakers for reuse in underserved nationsJOURNAL OF HEALTHCARE RISK MANAGEMENT, Issue 3 2010CPHRM, FASHRM, Robert Stanyon MS Some charitable organizations and physicians are willing to assist in the compassionate donation of explanted pacemakers for reuse in medically underserved nations. However, healthcare organizations must recognize that the Food and Drug Administration (FDA), device manufacturers, professional societies and many physicians advocate return of explanted pacemakers to the manufacturer to ensure an accurate performance database promoting improved device reliability and safety for the patient. [source] Reliability aspects of SiC Schottky diodesPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 10 2009Matthias Holz Abstract In recent years, silicon carbide (SiC) high-voltage power devices have gained an ever-increasing market share. The fast development of new device concepts and technologies, e.g. for SiC Schottky diodes, has led to devices with superior switching behaviour, which renders SiC power devices especially favourable for high-frequency applications. As of today, SiC devices enter various fields like, e.g. server power supplies, solar inverters, and drives. These applications pose quite different requirements not only on the electrical properties, but also on the long-term reliability of the devices. In this paper, we describe in detail how Infineon's SiC Schottky diodes excel the reliability requirements. We point out how material properties, device design and packaging technology affect the overall device reliability and how they can be optimized. In addition, we describe measurement results after stress tests that go far beyond standard stress tests according to JEDEC. E.g., we show that SiC devices can safely be operated at high voltage slopes of 120 V/ns. In addition, we show that the use of high performance die attach further improves the device properties and reliability. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substratePHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 3 2006R. Quay Abstract This work presents very recent examples for the realization of high-power amplifiers for both communication and solid-state radar applications based on AlGaN/GaN HEMTs on s.i. SiC substrate. Broadband power amplifiers for mobile communication base stations between 0.9 and 2.7 GHz are presented. Microstrip line X-frequency band power amplifiers provide pulsed output power levels of 10 W with 16 dB of gain at 9 GHz. This work further shows improved device reliability results at VDS = 30 V and 200 °C channel temperature for gate lengths of 300 nm. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||