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Device Fabrication (device + fabrication)
Selected AbstractsCarbon Nanotubes Anchored to Silicon for Device FabricationADVANCED MATERIALS, Issue 5 2010Kristina T. Constantopoulos Abstract This report highlights recent progress in the fabrication of vertically aligned carbon nanotubes (VA-CNTs) on silicon-based materials. Research into these nanostructured composite materials is spurred by the importance of silicon as a basis for most current devices and the disruptive properties of CNTs. Various CNT attachments methods of covalent and adsorptive nature are critically compared. Selected examples of device applications where the VA-CNT on silicon assemblies are showing particular promise are discussed. These applications include field emitters, filtration membranes, dry adhesives, sensors and scaffolds for biointerfaces. [source] High K Capacitors and OFET Gate Dielectrics from Self-Assembled BaTiO3 and (Ba,Sr)TiO3 Nanocrystals in the Superparaelectric LimitADVANCED FUNCTIONAL MATERIALS, Issue 4 2010Limin Huang Abstract Nanodielectrics is an emerging field with applications in capacitors, gate dielectrics, energy storage, alternatives to Li-ion batteries, and frequency modulation in communications devices. Self-assembly of high k dielectric nanoparticles is a highly attractive means to produce nanostructured films with improved performance,namely dielectric tunability, low leakage, and low loss,as a function of size, composition, and structure. One of the major challenges is conversion of the nanoparticle building block into a reliable thin film device at conditions consistent with integrated device manufacturing or plastic electronics. Here, the development of BaTiO3 and (Ba,Sr)TiO3 superparaelectric uniform nanocrystal (8,12,nm) films prepared at room temperature by evaporative driven assembly with no annealing step is reported. Thin film inorganic and polymer composite capacitors show dielectric constants in the tunable range of 10,30, dependent on composition, and are confirmed to be superparaelectric. Organic thin film transistor (TFT) devices on flexible substrates demonstrate the readiness of nanoparticle-assembled films as gate dielectrics in device fabrication. [source] Transparent Photo-Stable Complementary Inverter with an Organic/Inorganic Nanohybrid Dielectric LayerADVANCED FUNCTIONAL MATERIALS, Issue 5 2009Min Suk Oh Abstract Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide-based thin-film transistors (TFTs) on glass and plastic substrates. However, work in transparent electronics has been limited mostly to high-voltage devices operating at more than a few tens of volts, and has mainly focused on transparent display drivers. Low-voltage logic devices, such as transparent complementary inverters, operating in an electrically stable and photo-stable manner, are now very necessary to practically realize transparent electronics. Electrically stable dielectrics with high strength and high capacitance must also be proposed to support this mission, and simultaneously these dielectrics must be compatible with both n- and p-channel TFTs in device fabrication. Here, a nanohybrid dielectric layer that is composed of multiple units of inorganic oxide and organic self-assembled monolayer is proposel to support a transparent complementary TFT inverter operating at 3,V. [source] Aligned, Ultralong Single-Walled Carbon Nanotubes: From Synthesis, Sorting, to Electronic DevicesADVANCED MATERIALS, Issue 21 2010Zhongfan Liu Abstract Aligned, ultralong single-walled carbon nanotubes (SWNTs) represent attractive building blocks for nanoelectronics. The structural uniformity along their tube axis and well-ordered two-dimensional architectures on wafer surfaces may provide a straightforward platform for fabricating high-performance SWNT-based integrated circuits. On the way towards future nanoelectronic devices, many challenges for such a specific system also exist. This Review summarizes the recent advances in the synthesis, identification and sorting, transfer printing and manipulation, device fabrication and integration of aligned, ultralong SWNTs in detail together with discussion on their major challenges and opportunities for their practical application. [source] Electrically Controlled Catalytic Nanowire Growth from SolutionADVANCED MATERIALS, Issue 34 2009August Dorn Electric-field-induced catalytic growth of cadmium selenide nanowires from solution is demonstrated. Our approach highlights the importance of electric field and surface-charge density for catalytic nanowire growth. In addition, this method is compatible with conventional silicon-based technology, and we demonstrate in situ device fabrication at temperatures below 300 °C. [source] Highly Ordered, Millimeter-Scale, Continuous, Single-Crystalline Graphene Monolayer Formed on Ru (0001)ADVANCED MATERIALS, Issue 27 2009Yi Pan A single-crystalline graphene monolayer is grown on a Ru(0001) surface by thermal annealing of a ruthenium single crystal containing carbon. The layer is highly ordered, continuous, and exhibits perfect crystallinity, with good long-range order on the order of millimeters (see figure). These findings offer high-quality graphene layers for fundamental research as well as large-scale graphene wafers for device fabrication and integration. [source] Ultrafast laser written active devicesLASER & PHOTONICS REVIEWS, Issue 6 2009M. Ams Abstract Direct-write optical waveguide device fabrication is probably the most widely studied application of femtosecond laser micromachining in transparent dielectrics at the present time. Devices such as buried waveguides, power splitters, couplers, gratings, optical amplifiers and laser oscillators have all been demonstrated. This paper reviews the application of the femtosecond laser direct-write technique to the fabrication of active waveguide devices in bulk glass materials. [source] 6th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & TechnologiesPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2003Bálint P The EXMATEC workshops are a series of biannial conferences with the aim to bring together research and development specialists involved in compound semiconductor material physics, chemistry, process technology, characterization and device fabrication. EXMATEC 2002 is the continuation of successful meetings, previously held in Lyon, Parma, Freiburg, Cardiff and Heraklion. The central topics were development, improvement and application of new and advanced methods in the fabrication and evaluation of compound semiconductor materials and structures to develop understanding of the interrelationship between structural, electrical and other material properties and device characteristics, such as performance, reliability, reproducibility, lifetime, yield, etc. The conference topics apply to all compound semiconductor materials (III,V, II,VI, IV,IV, II,IV,V2), related structures and processing steps (from substrate and epitaxial growth to complete devices) and cover instrumentation and characterization issues. The full Proceedings of EXMATEC 2002 are published in the second issue of the new journal series physica status solidi , conferences Vol. 0, No. 2 (2003). As one representative example of the topics presented at this conference, the cover picture of the present issue issue of phys. stat. sol. (a) shows the band scheme of a typical GaInAs/AlInAs superlattice quantum cascade laser, taken from the invited paper by Razeghi and Slivken [1]. [source] Wet etching for improved GaN-based HBT performancePHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2005Jennifer A. Bardwell Abstract Photoenhanced wet etching of GaN in a peroxydisulfate aqueous solution has been used in npn HBT device fabrication. The wet etch acts as a selective etch for n-type layers, where the p-type layer acts as an etch stop. This allows the use of thinner base layers in an npn structure. No counter electrode or electrical connection to the wafer is required with the approach. We present experimental results on the fabrication of BJTs and HBTs using this self-aligned wet etching. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Amorphous and Microcrystalline Silicon , Materials Science and Devices,PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2004Norbert H. Nickel This Special Issue reviews the latest experimental and theoretical studies in the field of amorphous, nano- and microcrystalline silicon covering materials preparation, electrical and optical properties, characterization of defects, the role of hydrogen, device fabrication and characterization, and novel device applications. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Thin-film solar cells: an overviewPROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 2-3 2004K. L. Chopra Abstract Thin film solar cells (TFSC) are a promising approach for terrestrial and space photovoltaics and offer a wide variety of choices in terms of the device design and fabrication. A variety of substrates (flexible or rigid, metal or insulator) can be used for deposition of different layers (contact, buffer, absorber, reflector, etc.) using different techniques (PVD, CVD, ECD, plasma-based, hybrid, etc.). Such versatility allows tailoring and engineering of the layers in order to improve device performance. For large-area devices required for realistic applications, thin-film device fabrication becomes complex and requires proper control over the entire process sequence. Proper understanding of thin-film deposition processes can help in achieving high-efficiency devices over large areas, as has been demonstrated commercially for different cells. Research and development in new, exotic and simple materials and devices, and innovative, but simple manufacturing processes need to be pursued in a focussed manner. Which cell(s) and which technologies will ultimately succeed commercially continue to be anybody's guess, but it would surely be determined by the simplicity of manufacturability and the cost per reliable watt. Cheap and moderately efficient TFSC are expected to receive a due commercial place under the sun. Copyright © 2004 John Wiley & Sons, Ltd. [source] Synthesis and characterization of new light-emitting copolymers in polymeric-light-emitting-diode device fabricationsJOURNAL OF POLYMER SCIENCE (IN TWO SECTIONS), Issue 16 2004Sheng-Han Wu Abstract A series of thiophene-containing photoactive copolymers consisting of alternating conjugated and nonconjugated segments were synthesized. The 1H NMR spectra corroborated the well-defined structures, and the copolymers not only were soluble in common organic solvents but also had high glass-transition temperatures (ca. 130 °C) and good thermal stability up to 390 °C. Introducing aliphatic functional groups, such as alkyl or alkoxyl, into chromophores of the copolymers redshifted the photoluminescence spectra and lowered the optical bandgaps. The electrochemical bandgaps calculated from cyclic voltammetry agreed with the optical bandgaps and thus indicated that electroluminescence and photoluminescence originated from the same excited state. The energy levels (highest occupied molecular orbital and lowest unoccupied molecular orbital) of all the copolymers were lower than those of poly[2-methoxy-5-(2,-ethylhexyloxy)-1.4-phenylenevinylene] MEH,PPV, indicating balanced hole and electron injection, which led to improved performance in both single-layer and double-layer polymeric-light-emitting-diode devices fabricated with these copolymers. All the copolymers emitted bluish-green or green light above the threshold bias of 5.0 V under ambient conditions. At the maximum bias of 10 V, the electroluminescence of a device made of poly(2-{4-[2-(3-ethoxy phenyl)ethylene]phenyl}-5-{4-[2-(3-ethoxy,4-1,8-octanedioxy phenyl)ethylene]phenyl}thiophene) was 5836 cd/m2. The external electroluminescence efficiency decreased with the lifetime as the polymer degraded. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 3954,3966, 2004 [source] | |||||||||||||