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Deposited Material (deposited + material)
Selected AbstractsNumerical algorithms for modelling electrodeposition: Tracking the deposition front under forced convection from megasonic agitationINTERNATIONAL JOURNAL FOR NUMERICAL METHODS IN FLUIDS, Issue 3 2010Michael Hughes Abstract Electrodeposition is a widely used technique for the fabrication of high aspect ratio microstructures. In recent years, much research has been focused within this area aiming to understand the physics behind the filling of high aspect ratio vias and trenches on substrates and in particular how they can be made without the formation of voids in the deposited material. This paper reports on the fundamental work towards the advancement of numerical algorithms that can predict the electrodeposition process in micron scaled features. Two different numerical approaches have been developed, which capture the motion of the deposition interface and 2-D simulations are presented for both methods under two deposition regimes: those where surface kinetics is governed by Ohm's law and the Butler,Volmer equation, respectively. In the last part of this paper the modelling of acoustic forces and their subsequent impact on the deposition profile through convection is examined. Copyright © 2009 John Wiley & Sons, Ltd. [source] Investigation into the protein composition of human tear fluid using centrifugal filters and drop coating deposition Raman spectroscopyJOURNAL OF RAMAN SPECTROSCOPY, Issue 2 2009Jacob Filik Abstract Drop coating deposition Raman spectroscopy (DCDRS) is a simple method of analysing weak protein solutions. This study is another step in evaluating the analysis of tear fluid by DCDRS as a future medical diagnostic technique. The main aims of this study are to determine whether the DCDR spectra from tear samples contain signals from more than one protein (so relative levels can be measured) and, if so, are the proteins homogeneously distributed in the dried ring of the deposited material. Tear samples were collected from four healthy volunteers and pooled prior to analysis. Proteins were separated by mass into three groups using centrifugal filters. These groups contained proteins with (1) masses greater than 100 kDa, (2) masses between 100 and 50 kDa and (3) masses between 50 and 3 kDa. DCDR spectra from each of these protein group solutions displayed significant differences, confirming that the mass separation had been successful. When used as basis vectors for least-squares fitting, these spectra (and that of urea) produced excellent fits to the normal tear spectra. Least-squares fitting of spectra from the same point on a single sample and from several drops of the same sample showed that the tear DCDR spectra were highly reproducible. Raman point mapping of the tear ring showed significant radial ring variation, especially towards the outer edge of the ring. The specific peak changes in the protein signal across the ring suggested that the difference in the outer edge was due to protein desiccation as opposed to inhomogeneous protein deposition. Copyright © 2008 John Wiley & Sons, Ltd. [source] Pulsed layer growth of AlInGaN nanostructuresPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2008Michael Jetter Abstract A pulsed layer growth mode in the metal-organic vapor phase epitaxy (MOVPE) was used to fabricate excellent quality AlInGaN nanostructures. The amount of material was varied, resulting in AlInGaN layer thicknesses between nominally 1.5 nm and 6 nm, respectively. We have analyzed the material properties by X-ray diffraction (XRD) as well as photoluminescence (PL) spectroscopy. The observed XRD-spectra and the PL intensity show the high quality of the deposited material. By analyzing the PL spectra we have found an energetic shift of the resonance lines from 2.65 eV to 3.33 eV with decreasing well thickness. We attribute this shift mainly to the presence of internal electric fields at the AlIn-GaN/GaN interface. Power-dependent and time resolved PL experiments confirm this observation. Comparing the luminescence at elevated temperatures, the pulsed layer epitaxy structures reveal a much higher intensity as the conventional grown samples. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] UV emission on a Si substrate: Optical and structural properties of ,-CuCl on Si grown using liquid phase epitaxy techniquesPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 5 2009A. Cowley Abstract Considerable research is being carried out in the area of wide band gap semiconductor materials for light emission in the 300,400 nm spectral range. Current materials being used for such devices are typically based on II,VI and III-nitride compounds and variants thereof. However, one of the major obstacles to the successful fabrication of III-N devices is lattice mismatch-induced high dislocation densities for epitaxially grown layers on non-native substrates. ,-CuCl is a direct bandgap material and an ionic wide bandgap I,VII semiconductor with a room temperature free exciton binding energy of ,190 meV (compared to ,25 meV and ,60 meV for GaN and ZnO, respectively) and has a band gap of 3.4 eV (, , 366 nm). The lattice constant of ,-CuCl (0.541 nm) is closely matched to that of Si (0.543 nm). This could, in principle, lead to the development of optoelectronic systems based on CuCl grown on Si. Research towards this end has successfully yielded polycrystalline ,-CuCl on Si(100) and Si(111) using vacuum-based deposition techniques [1]. We report on developments towards achieving single crystal growth of CuCl from solution via Liquid Phase Epitaxy (LPE) based techniques. Work is being carried out using alkali halide flux compounds to depress the liquidus temperature of the CuCl below its solid phase wurtzite-zincblende transition temperature (407 °C [2]) for solution based epitaxy on Si substrates. Initial results show that the resulting KCl flux-driven deposition of CuCl onto the Si substrate has yielded superior photoluminescence (PL) and X-ray excited optical luminescence (XEOL) behavior relative to comparitively observed spectra for GaN or polycrystalline CuCl. This enhancement is believed to be caused by an interaction between the KCl and CuCl material subsequent to the deposition process, perhaps involving a reduction in Cl vacancy distributions in CuCl. This paper presents a detailed discussion of a CuCl LPE growth system as well as the characterization of deposited materials using X-ray diffraction (XRD), room temperature and low temperature PL, and XEOL. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||