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Deformation Potential (deformation + potential)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

Laser induced negative conductivity of diamond

LASER PHYSICS LETTERS, Issue 12 2006
A. S. Baturin
Abstract We consider the negative mobility of electrons in diamond excited by a picosecond laser pulse at low temperatures, due to the inelastic electron-phonon collisions. For the first time the dependence of the deformation potential on the phonon wave number has been taken into account. This dependence changes significantly the region of the negative electron mobility as a function of the phonon temperature. (© 2006 by Astro, Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA) [source]

Resonant Raman scattering in spherical quantum dots: II,VI versus III,V semiconductor nanocrystals

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 6 2010
Mikhail I. Vasilevskiy
Abstract Resonant Raman scattering (RRS) in nearly-spherical nanocrystal (NC) quantum dots (QDs) is discussed with respect to the underlying (Fröhlich-type and optical deformation potential, ODP) mechanisms of the exciton,phonon interaction. Their relative contribution for different QD materials, both II,VI and III,V is compared. It is shown that the (usually overlooked) ODP interaction is entirely responsible for an additional peak in the RRS spectra, situated near the transverse-optical (TO) phonon frequency, which has been observed for InP, InAs and, recently, CdTe QDs. RRS spectra calculated using continuum models for confined phonons and excitons and taking into account both interaction mechanisms are in excellent agreement with these experimental data. [source]

Absolute deformation potential with a compressed atom model

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 2 2003
K. Kosaka
Abstract A compressed atom model is developed to study the one-electron energy level in the FLAPW (full-potential linearized augmented plane wave) calculation. The reference energy level in the FLAPW calculations is shown to be dominated by the exchange-correlation potential. Taking this into account it is possible to evaluate the absolute deformation potential. [source]

Effective mass of InN estimated by Raman scattering

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7-8 2010
Jung Gon Kim
Abstract We have estimated the longitudinal effective mass (m,) of electron in n-type InN films by Raman scattering. The samples were grown by MOVPE (metal organic vapor phase epitaxy) with free carrier concentration of n =6.7×1018 -9.9×1018 cm -3 according to Hall measurement. A weak Raman signal observed at ,430 cm -1 at room temperature was sharpened and shifted to higher frequency toward the A1(TO)-phonon mode at 447 cm -1 with increasing n. This mode was assigned to the lower branch (L - ) of the longitudinal-optic-phonon-plasmon-coupled (LOPC) mode. The line shape was carefully analyzed by a semi-classical line-shape fitting analysis assuming deformation potential and electro-optic coupling mechanisms for the light scattering process. A line-shape fitting analysis was conducted by adjusting three major parameters; electron density, effective mass and plasmon damping rate. The analysis well reproduced values of electron density and mobility deduced by Hall measurement. Electron effective mass of m,*/m0 = 0.05 (±0.01) was also obtained as the best-fit parameter. The result agrees well with previous data obtained by other optical methods. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a -plane GaN

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 7 2006
V. Darakchieva
Abstract Generalized infrared spectroscopic ellipsometry was applied to study the vibrational properties of anisotropically strained a -plane GaN films with different thicknesses. We have established a correlation between the phonon mode parameters and the strain, which allows the determination of the deformation potentials and strain-free frequency of the GaN A1(TO) mode. These results are compared with previous theoretical and experimental findings and discussed. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]