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Circuit Simulator (circuit + simulator)
Selected AbstractsAn efficient neural network approach for nanoscale FinFET modelling and circuit simulationINTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS, Issue 5 2009M. S. Alam Abstract The present paper demonstrates the suitability of artificial neural network (ANN) for modelling of a FinFET in nano-circuit simulation. The FinFET used in this work is designed using careful engineering of source,drain extension, which simultaneously improves maximum frequency of oscillation ,max because of lower gate to drain capacitance, and intrinsic gain AV0,=,gm/gds, due to lower output conductance gds. The framework for the ANN-based FinFET model is a common source equivalent circuit, where the dependence of intrinsic capacitances, resistances and dc drain current Id on drain,source Vds and gate,source Vgs is derived by a simple two-layered neural network architecture. All extrinsic components of the FinFET model are treated as bias independent. The model was implemented in a circuit simulator and verified by its ability to generate accurate response to excitations not used during training. The model was used to design a low-noise amplifier. At low power (Jds,10,µA/µm) improvement was observed in both third-order-intercept IIP3 (,10,dBm) and intrinsic gain AV0 (,20,dB), compared to a comparable bulk MOSFET with similar effective channel length. This is attributed to higher ratio of first-order to third-order derivative of Id with respect to gate voltage and lower gds in FinFET compared to bulk MOSFET. Copyright © 2009 John Wiley & Sons, Ltd. [source] MMICs time-domain electrical physical simulator adapted to the parallel computationINTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS, Issue 3 2009A. El Moussati Abstract The programming method used to adapt an existing time-domain electrical circuit simulator to the parallel computation is presented. The originality of the simulator results in the semiconductor device numerical physical modeling. Thus, the organization of the existing software, initially developed to be run on a monoprocessor sequential Unix workstation, is firstly detailed. Accounting for specifications at once regarding the effort necessary to modify the software, the wished simulator application field and the constraints resulting from the available computer, two levels of parallelization have been pointed out and implemented by means of the message passing interface parallel programming tool. As an illustration, some results concerning the simulation of a microwave monolithic integrated circuit (MMIC), especially a 2,40,GHz HEMT transistor cascode stage distributed amplifier, are presented. Circuits of increasing complexity have been considered. The evaluation of the sequential/parallel computation ratio demonstrates that significant gains can be expected from the parallel computation opening the way to analysis of the operation of MMICs of mean complexity by means of a numerical physical approach. Copyright © 2008 John Wiley & Sons, Ltd. [source] Artificial neural network modeling of RF MEMS resonatorsINTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 4 2004Yongjae Lee Abstract In this article, a novel and efficient approach for modeling radio-frequency microelectromechanical system (RF MEMS) resonators by using artificial neural network (ANN) modeling is presented. In the proposed methodology, the relationship between physical-input parameters and corresponding electrical-output parameters is obtained by combined circuit/full-wave/ANN modeling. More specifically, in order to predict the electrical responses from a resonator, an analytical representation of the electrical equivalent-network model (EENM) is developed from the well-known electromechanical analogs. Then, the reduced-order, nonlinear, dynamic macromodels from 3D finite-element method (FEM) simulations are generated to provide training, validating, and testing datasets for the ANN model. The developed ANN model provides an accurate prediction of an electrical response for various sets of driving parameters and it is suitable for integration with an RF/microwave circuit simulator. Although the proposed approach is demonstrated on a clamped-clamped (C-C) beam resonator, it can be readily adapted for the analysis of other micromechanical resonators. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14: 302,316, 2004. [source] Design of capacitive coupled resonator microstrip filterMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 2 2008J. S. Mandeep Abstract A microstrip bandpass filter with a new type of capacitive-coupled resonator is presented. The filter is designed to be smaller compared with the same type of parallel-coupled bandpass filter. The filter is designed for a centre frequency of 2.5 GHz that lies in the S-band frequency range. The insertion loss at fo is 2.4 dB and the measured 3-dB bandwidth is 8.6%. The agreement between the predicted and measured results is excellent, and even the circuit simulator gives a very good prediction for the filter characteristics. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 460,462, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23094 [source] Temperature-frequency characteristics simulation of piezoelectric resonators and their equivalent circuits based on three-dimensional finite element modellingINTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS, Issue 6 2003N. Wakatsuki Abstract The electromechanical resonators made of piezoelectric crystals such as a quartz crystal are widely used for electronic devices. Their frequency,temperature characteristics are of primary importance for their applications to the frequency control devices. The present paper demonstrates numerical simulation for several types of resonators using 3-D Finite Element Modelling. The results are compared with the theoretical values whenever they are available. As they are electronic devices, the equivalent circuit representation is often favourable for describing the admittance at the electrical terminals which enables the circuit analysis including the effect of the temperature change by using commercially available circuit simulators. Copyright © 2003 John Wiley & Sons, Ltd. [source] Recent advances of neural network-based EM-CADINTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 5 2010Humayun Kabir Abstract In this article, we provide an overview of recent advances in computer-aided design techniques using neural networks for electromagnetic (EM) modeling and design applications. Summary of various recent neural network modeling techniques including passive component modeling, design and optimization using the models are discussed. Training data for the models are generated from EM simulations. The trained neural networks become fast and accurate models of EM structures. The models are then incorporated into various optimization methods and commercially available circuit simulators for fast design and optimization. We also provide an overview of recently developed neural network inverse modeling technique. Training a neural network inverse model directly may become difficult due to the nonuniqueness of the input,output relationship in the inverse model. Training data containing multivalued solutions are divided into groups according to derivative information. Multiple inverse submodels are built based on divided data groups and are then combined to form a complete model. Comparison between the conventional EM-based design approach and the inverse design approach has also been discussed. These computer-aided design techniques using neural models provide circuit level simulation speed with EM level accuracy avoiding the high computational cost of EM simulation. © 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2010. [source] Model order reduction of linear and nonlinear 3D thermal finite-element description of microwave devices for circuit analysisINTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 5 2005Raphaël Sommet Abstract Electrothermal models of power devices are necessary for the accurate analysis of their performances. For this reason, this article deals with a methodology to obtain an electrothermal model based on a reduced model of a 3D thermal finite-element (FE) description for its thermal part and on pulsed electrical measurements for its electrical part. The reduced thermal model is based on the Ritz vector approach, which ensures a steady-state solution in every case. An equivalent SPICE subcircuit implementation for circuit simulation is proposed and discussed. An extension of the method to a nonlinear reduced model based on the Kirchoff transformation is also proposed. The complete models have been successfully implemented in circuit simulators for several HBT or PHEMT device structures. Many results concerning devices and circuits are presented, including simulation of both the static and dynamic collector-current collapse in HBTs due to the thermal phenomenon. Moreover, the results in terms of the circuit for an X-band high-power amplifier are also presented. As for the nonlinear approach, results concerning an homogeneous structure is given. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2005. [source] | ||||||||||