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Charge Injection (charge + injection)
Selected AbstractsControlling Electron and Hole Charge Injection in Ambipolar Organic Field-Effect Transistors by Self-Assembled MonolayersADVANCED FUNCTIONAL MATERIALS, Issue 15 2009Xiaoyang Cheng Abstract Controlling contact resistance in organic field-effect transistors (OFETs) is one of the major hurdles to achieve transistor scaling and dimensional reduction. In particular in the context of ambipolar and/or light-emitting OFETs it is a difficult challenge to obtain efficient injection of both electrons and holes from one injecting electrode such as gold since organic semiconductors have intrinsically large band gaps resulting in significant injection barrier heights for at least one type of carrier. Here, systematic control of electron and hole contact resistance in poly(9,9-di- n -octylfluorene- alt -benzothiadiazole) ambipolar OFETs using thiol-based self-assembled monolayers (SAMs) is demonstrated. In contrast to common believe, it is found that for a certain SAM the injection of both electrons and holes can be improved. This simultaneous enhancement of electron and hole injection cannot be explained by SAM-induced work-function modifications because the surface dipole induced by the SAM on the metal surface lowers the injection barrier only for one type of carrier, but increases it for the other. These investigations reveal that other key factors also affect contact resistance, including i) interfacial tunneling through the SAM, ii) SAM-induced modifications of interface morphology, and iii) the interface electronic structure. Of particular importance for top-gate OFET geometry is iv) the active polymer layer thickness that dominates the electrode/polymer contact resistance. Therefore, a consistent explanation of how SAM electrode modification is able to improve both electron and hole injection in ambipolar OFETs requires considering all mentioned factors. [source] Efficient Charge Injection from the S2 Photoexcited State of Special-Pair Mimic Porphyrin Assemblies Anchored on a Titanium-Modified ITO AnodeCHEMISTRY - A EUROPEAN JOURNAL, Issue 31 2006Mitsuhiko Morisue Dr. Abstract A novel surface fabrication methodology has been accomplished, aimed at efficient anodic photocurrent generation by a photoexcited porphyrin on an ITO (indium,tin oxide) electrode. The ITO electrode was submitted to a surface sol,gel process with titanium n -butoxide in order to deposit a titanium monolayer. Subsequently, porphyrins were assembled as monolayers on the titanium-treated ITO surface via phosphonate, isophthalate, and thiolate groups. Slipped-cofacial porphyrin dimers, the so-called artificial special pair at the photoreaction center, were organized through imidazolyl-to-zinc complementary coordination of imidazolylporphyrinatozinc(II) units, which were covalently immobilized by ring-closing olefin metathesis of allyl side chains. The modified surfaces were analyzed by means of X-ray photoelectron spectroscopy. Photoirradiation of the porphyrin dimer generated a large anodic photocurrent in aqueous electrolyte solution containing hydroquinone as an electron sacrificer, due to the small reorganization energy of the dimer. The use of different linker groups led to significant differences in the efficiencies of anodic photocurrent generation. The apparent flat-band potentials evaluated from the photocurrent properties at various pH values and under biased conditions imply that the band structure of the ITO electrode is modified by the anchoring species. The quantum yield for the anodic photocurrent generation by photoexcitation at the Soret band is increased to 15,%, a surprisingly high value without a redox cascade structure on the ITO electrode surface, while excitation at the Q band is not so significant. Extensive exploration of the photocurrent properties has revealed that hot injection of the photoexcited electron from the S2 level into the conduction band of the ITO electrode takes place before internal conversion to the S1* state, through the strong electronic communication of the phosphonyl anchor with the sol,gel-modified ITO surface. [source] Motional smearing of electrically recovered couplings measured from multipulse transientsCONCEPTS IN MAGNETIC RESONANCE, Issue 3 2001Scott A. Riley Abstract The measurement of residual dipolar and quadrupolar coupling constants in the liquid phase by using an electric field to destroy the isotropic nature of molecular tumbling is complicated by charge-induced turbulent motion. In many cases this motion is due to charge injection at electrode surfaces, an effect that leads to an apparent removal of electrically recovered anisotropic spectral splittings when measured from a spin-echo envelope modulation produced by a train of radio frequency (rf) pulses. To understand this averaging, the effect of quadrupolar couplings and enhanced molecular diffusion on free-induction, spin-echo, and Carr,Purcell signals is analytically determined in the special case of homogeneous rf pulses. Additional signal damping due to rf inhomogeneity and coupling constant heterogeneity is determined by numerically extending the kernel formalism introduced by Herzog and Hahn to understand spin diffusion in solids. Finally, the merit of the numerical approach is tested by comparison with analytical results for homogeneous rf pulses and experimental results for perdeuterated nitrobenzene involving inhomogeneous rf pulses and coupling heterogeneity. © 2001 John Wiley & Sons, Inc. Concepts Magn Reson 13: 171,189, 2001 [source] Organic Field-Effect Transistors: Planarization of Polymeric Field-Effect Transistors: Improvement of Nanomorphology and Enhancement of Electrical Performance (Adv. Funct.ADVANCED FUNCTIONAL MATERIALS, Issue 14 2010Mater. Contact geometry plays an important role in charge injection and transport in organic field-effect transistors. On page 2216, T. Kowalewski, L. M. Porter, et al. show a dramatic effect of electrode planarization on the polymer morphology at the contact edges and a resulting increase in fi eld-effect mobility in short channel length devices, and a corresponding decrease in contact resistance. The cover image shows atomic force micrograph of individual polymer nanofi brils spanning the length of a 10 µm channel transistor with planarized contacts. [source] Planarization of Polymeric Field-Effect Transistors: Improvement of Nanomorphology and Enhancement of Electrical PerformanceADVANCED FUNCTIONAL MATERIALS, Issue 14 2010Kumar A. Singh Abstract The planarization of bottom-contact organic field-effect transistors (OFETs) resulting in dramatic improvement in the nanomorphology and an associated enhancement in charge injection and transport is reported. Planar OFETs based on regioregular poly(3-hexylthiophene) (rr-P3HT) are fabricated wherein the Au bottom-contacts are recessed completely in the gate-dielectric. Normal OFETs having a conventional bottom-contact configuration with 50-nm-high contacts are used for comparison purpose. A modified solvent-assisted drop-casting process is utilized to form extremely thin rr-P3HT films. This process is critical for direct visualization of the effect of planarization on the polymer morphology. Atomic force micrographs (AFM) show that in a normal OFET the step between the surface of the contacts and the gate dielectric disrupts the self-assembly of the rr-P3HT film, resulting in poor morphology at the contact edges. The planarization of contacts results in notable improvement of the nanomorphology of rr-P3HT, resulting in lower resistance to charge injection. However, an improvement in field-effect mobility is observed only at short channel lengths. AFM shows the presence of well-ordered nanofibrils extending over short channel lengths. At longer channel lengths the presence of grain boundaries significantly minimizes the effect of improvement in contact geometry as the charge transport becomes channel-limited. [source] The Influence of Film Morphology in High-Mobility Small-Molecule:Polymer Blend Organic TransistorsADVANCED FUNCTIONAL MATERIALS, Issue 14 2010Jeremy Smith Abstract Organic field-effect transistors (OFETs) based upon blends of small molecular semiconductors and polymers show promise for high performance organic electronics applications. Here the charge transport characteristics of high mobility p-channel organic transistors based on 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene:poly(triarylamine) blend films are investigated. By simple alteration of the film processing conditions two distinct film microstructures can be obtained: one characterized by small spherulitic grains (SG) and one by large grains (LG). Charge transport measurements reveal thermally activated hole transport in both SG and LG film microstructures with two distinct temperature regimes. For temperatures >115,K, gate voltage dependent activation energies (EA) in the range of 25,60 meV are derived. At temperatures <115,K, the activation energies are smaller and typically in the range 5,30 meV. For both film microstructures hole transport appears to be dominated by trapping at the grain boundaries. Estimates of the trap densities suggests that LG films with fewer grain boundaries are characterized by a reduced number of traps that are less energetically disordered but deeper in energy than for small SG films. The effects of source and drain electrode treatment with self-assembled monolayers (SAMs) on current injection is also investigated. Fluorinated thiol SAMs were found to alter the work function of gold electrodes by up to ,1,eV leading to a lower contact resistance. However, charge transport analysis suggests that electrode work function is not the only parameter to consider for efficient charge injection. [source] Electrochemically Tuned Properties for Electrolyte-Free Carbon Nanotube SheetsADVANCED FUNCTIONAL MATERIALS, Issue 14 2009Alexander A. Zakhidov Abstract Injecting high electronic charge densities can profoundly change the optical, electrical, and magnetic properties of materials. Such charge injection in bulk materials has traditionally involved either dopant intercalation or the maintained use of a contacting electrolyte. Tunable electrochemical charge injection and charge retention, in which neither volumetric intercalation of ions nor maintained electrolyte contact is needed, are demonstrated for carbon nanotube sheets in the absence of an applied field. The tunability of electrical conductivity and electron field emission in the subsequent material is presented. Application of this material to supercapacitors may extend their charge-storage times because they can retain charge after the removal of the electrolyte. [source] Effect of Traps on Carrier Injection and Transport in Organic Field-effect TransistorIEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING, Issue 4 2010Martin Weis Non-member Abstract This study illustrates effect of traps on the charge injection and transport in the organic field-effect transistor (OFET). Here are included silicon nanoparticles (NPs) on a semiconductor-gate insulator interface, which work as trapping centers of charge carriers. Charge transport and injection phenomena are investigated by electrical measurements in presence of traps with designed densities. We find that OFETs with a low concentration of intrinsic carriers, such as a pentacene, are extremely sensitive to the internal electric fields. A significant threshold voltage shift due to trapped charge is observed, with a possibility to tune it by controlling the NP density. We demonstrate that the NP film can serve to design the amount of the accumulated charge in OFET and thus change the space-charge-limited conditions to the injection-limited conditions. A detailed analysis of pentacene OFET based on dielectric properties and the Maxwell-Wagner model reveals the internal electric field created by NPs. Additionally, the effect of NPs is discussed with respect to effective mobility, and its decrease is related to deceleration of carrier propagation by the trapping effect as well as low injection due to the increase of the carrier injection barrier by the internal field. Copyright © 2010 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc. [source] Manipulating the Local Light Emission in Organic Light-Emitting Diodes by using Patterned Self-Assembled Monolayers,ADVANCED MATERIALS, Issue 14 2008Simon G. J. Mathijssen Patterned organic light-emitting diodes are fabricated by using microcontact- printed self-assembled monolayers on a gold anode (see background figure). Molecules with dipole moments in opposite directions result in an increase or a decrease of the local work function (foreground picture), providing a direct handle on charge injection and enabling local modification of the light emission. [source] Comparative study of electronic structure and optical properties of a series of Pt(II) complexes containing different electron-donating and -withdrawing groups: a DFT studyJOURNAL OF PHYSICAL ORGANIC CHEMISTRY, Issue 3 2010Xiao-Na Li Abstract We report a quantum-chemistry study of electronic structures and spectral properties of a series of Pt(II) complexes containing different substituents (CH3 (1), OCH3 (2), NO2 (3), CF3 (4), and COOH (5)). 1 and 2 have been previously synthesized in experiment, while 3,5 are artificial complexes that we suggest can be used to investigate the electron-withdrawing effect on charge injection, transport, absorption, and phosphorescence properties. The results reveal that the stronger electron-donating and -withdrawing groups show stronger absorption intensity, while the phosphorescence efficiency is generally higher for complexes containing electron-donating substituents. 1 and 2 are easier for hole injection, while 3,5 are easier for electron injection. The enhanced electron injection abilities of 3,5 will confine more excitons in the light-emitting layer (EML) and may not result in lower electroluminescence (EL) efficiency than 1 and 2. These results suggest that the three artificial complexes may be new emitters in organic light-emitting diodes (OLEDs). Copyright © 2009 John Wiley & Sons, Ltd. [source] Efficient blue-green-emitting poly[(5-diphenylamino-1,3-phenylenevinylene)- alt -(2,5-dihexyloxy-1,4-phenylenevinylene)] derivatives: Synthesis and optical propertiesJOURNAL OF POLYMER SCIENCE (IN TWO SECTIONS), Issue 7 2006Liang Liao Abstract New poly(phenylene vinylene) derivatives with a 5-diphenylamino-1,3-phenylene linkage (including polymers 2, 3, and 5) have been synthesized to improve the charge-injection properties. These polymers are highly photoluminescent with fluorescent quantum yields as high as 76% in tetrahydrofuran solutions. With effective ,-conjugation interruption at adjacent m -phenylene units, chromophores of different conjugation lengths can be incorporated into the polymer chain in a controllable manner. In polymer 2, the structural regularity leads to an isolated, well-defined emitting chromophore. Isomeric polymer 3 of a random chain sequence, however, allows the effective emitting chromophores to be joined in sequence by sharing a common m -phenylene linkage (as shown in a molecular fragment). Double-layer light-emitting-diode devices using 2, 3, and 5 as emitting layers have turn-on voltages of about 3.5 V and produce blue-green emissions with peaks at 493, 492, and 482 nm and external quantum efficiencies up to 1.42, 0.98, and 1.53%, respectively. In comparison with a light-emitting diode using 2, a device using 3 shows improved charge injection and displays increased brightness by a factor of ,3 to 1400 cd/m2 at an 8-V bias. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2307,2315, 2006 [source] Si/SiO2 nanocomposite by CVD infiltration of porous SiO2PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2005G. Amato Abstract The aim of the present paper is to report first results on an innovative method for producing Si/SiO2 nanocomposites. Starting from a porous oxide structure, we infiltrated Si by Chemical Vapour Deposition of SiH4, under controlled conditions. In this way, we succeeded in infiltrating Si into the SiO2 template. Porous oxide is obtained by dry oxidation of mesoporous Si. By means of the electrochemical process used for producing porous Si, an interconnected pore structure is obtained. This allows for Si infiltration, giving rise, in principle, to an interconnected network of Si crystallites, in which electrical carriers are easily driven. Efficient charge injection in Si nanocrystals is of crucial importance for several applications, from electroluminescence to memory devices. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Analysis and modeling of organic devicesPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 6 2004Y. Roichman Abstract We present self consistent picture of charge injection and transport in low mobility disordered organic based devices. We demonstrate the importance of accounting for charge density effects in both modeling and analysis of devices. We outline a method for the analysis of LEDs and FETs. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Electrical Scanning Probe Microscopy on Active Organic Electronic DevicesADVANCED MATERIALS, Issue 1 2009Liam S. C. Pingree Abstract Polymer- and small-molecule-based organic electronic devices are being developed for applications including electroluminescent displays, transistors, and solar cells due to the promise of low-cost manufacturing. It has become clear that these materials exhibit nanoscale heterogeneities in their optical and electrical properties that affect device performance, and that this nanoscale structure varies as a function of film processing and device-fabrication conditions. Thus, there is a need for high-resolution measurements that directly correlate both electronic and optical properties with local film structure in organic semiconductor films. In this article, we highlight the use of electrical scanning probe microscopy techniques, such as conductive atomic force microscopy (c-AFM), electrostatic force microscopy (EFM), scanning Kelvin probe microscopy (SKPM), and similar variants to elucidate charge injection/extraction, transport, trapping, and generation/recombination in organic devices. We discuss the use of these tools to probe device structures ranging from light-emitting diodes (LEDs) and thin-film transistors (TFT), to light-emitting electrochemical cells (LECs) and organic photovoltaics. [source] | |||||||||||||