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Capacitor Applications (capacitor + application)
Selected AbstractsPerovskite BaHfO3 Dielectric Layers for Dynamic Random Access Memory Storage Capacitor Applications,ADVANCED ENGINEERING MATERIALS, Issue 4 2009Grzegorz Lupina Very thin layers of dielectric materials are of high importance for many advanced microelectronic applications. In this work, properties of very thin (<50,nm) BaHfO3 layers prepared using molecular beam deposition and chemical vapor deposition are examined. We conclude that polycrystalline cubic BaHfO3 films appear to be promising candidates for future memory capacitor applications. [source] Quantitative X-Ray Spectrum Imaging of Lead Lanthanum Zirconate Titanate PLZT Thin-FilmsJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 11 2008Chad M. Parish The high permittivity of Pb(Zr,Ti)O3 and (Pb,La)(Zr,Ti)O3,PZT and PLZT, respectively,thin films and the flexibility of chemical solution deposition (CSD) make solution-derived P(L)ZT thin films extremely attractive for integrated capacitor applications. However, Pb-loss or cation segregation during processing results in degraded properties of the final film. Here, we have extended the use of multivariate statistical analysis (MSA) of energy-dispersive spectroscopy (EDS) spectrum images (SIs) in scanning transmission electron microscopy (STEM) to allow the two-dimensional (2D) quantitative analysis of cation segregation and depletion in P(L)ZT thin films. Quantified STEM-EDS SIs allow high-resolution (< ,10 nm) quantification of these cation distributions. Surface Pb depletion is found after crystallization and is replenished by a unique post-crystallization PbO overcoat+anneal processes. Zr/Ti and La segregation are found to develop in a decidedly nonplanar fashion during crystallization, especially in PLZT 12/70/30 material, highlighting the need for 2D analysis. Quantitative 2D chemical information is essential for improved processing of homogeneous P(L)ZT films with optimal electrical properties. [source] PO2 Dependence of the Diffuse-Phase Transition in Base Metal Capacitor DielectricsJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 1 2006Daniel E. McCauley The diffuse-phase transition in BaTiO3 -based dielectrics for capacitor applications has been studied with respect to its dependence on oxygen partial pressure during sintering. Understanding the mobility of this transition is critical in developing next generation dielectrics for ultra thin (,1 ,m) applications while maintaining the appropriate temperature stability and insulation resistance. Historically, a heterogeneous core/shell microstructure was developed to maintain temperature stability. However, in fired grains of ,250 nm (required for layers ,1 ,m) a well-defined core/shell structure is very difficult to establish. The results from this study demonstrate that careful control of the diffuse-phase transition addresses some of these problems. [source] Optical characteristics of thin rf sputtered Ta2O5 layersPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 2 2005Tz. Babeva Abstract The optical properties of rf sputtered (30; 52 nm) Ta2O5 before and after O2 annealing at 1173 K have been investigated in the terms of storage capacitor applications for high density dynamic memories. Refractive index and thickness of the films are determined from transmittance and reflectance measurements at normal light incidence in the spectral range 400,800 nm. The film density explored by refractive index is improved with increasing film thickness as well as after annealing. The optical band gap is found to be 4.20 eV for 30 nm and 4.12 eV for 52 nm Ta2O5 regardless of the amorphous status of the layers-amorphous (as-deposited) or polycrystalline (annealed layers). (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||