Block Ratio (block + ratio)

Distribution by Scientific Domains


Selected Abstracts


Synthesis, Morphology, and Properties of Poly(3-hexylthiophene)- block -Poly(vinylphenyl oxadiazole) Donor,Acceptor Rod,Coil Block Copolymers and Their Memory Device Applications

ADVANCED FUNCTIONAL MATERIALS, Issue 18 2010
Yi-Kai Fang
Abstract Novel donor,acceptor rod,coil diblock copolymers of regioregular poly(3-hexylthiophene) (P3HT)- block -poly(2-phenyl-5-(4-vinylphenyl)-1,3,4-oxadiaz-ole) (POXD) are successfully synthesized by the combination of a modified Grignard metathesis reaction (GRIM) and atom transfer radical polymerization (ATRP). The effects of the block ratios of the P3HT donor and POXD pendant acceptor blocks on the morphology, field effect transistor mobility, and memory device characteristics are explored. The TEM, SAXS, WAXS, and AFM results suggest that the coil block fraction significantly affects the chain packing of the P3HT block and depresses its crystallinity. The optical absorption spectra indicate that the intramolecular charge transfer between the main chain P3HT donor and the side chain POXD acceptor is relatively weak and the level of order of P3HT chains is reduced by the incorporation of the POXD acceptor. The field effect transistor (FET) hole mobility of the system exhibits a similar trend on the optical properties, which are also decreased with the reduced ordered P3HT crystallinity. The low-lying highest occupied molecular orbital (HOMO) energy level (,6.08 eV) of POXD is employed as charge trap for the electrical switching memory devices. P3HT- b -POXD exhibits a non-volatile bistable memory or insulator behavior depending on the P3HT/POXD block ratio and the resulting morphology. The ITO/P3HT44 - b - POXD18/Al memory device shows a non-volatile switching characteristic with negative differential resistance (NDR) effect due to the charge trapped POXD block. These experimental results provide the new strategies for the design of donor-acceptor rod-coil block copolymers for controlling morphology and physical properties as well as advanced memory device applications. [source]


Heteroarm Star Polystyrene- block -Poly(4-vinylpyridine): Multiple Morphologies in Dilute Solutions

MACROMOLECULAR CHEMISTRY AND PHYSICS, Issue 22 2008
Chia-Hung Lin
Abstract Synthesis and solution morphologies of four new heteroarm star polystyrene- block -poly(4-vinylpyridine) were studied. As the water content increased, a morphological transformation of heteroarm PS4 -P4VP4 from spheres to cylinders, vesicles, and large compound vesicles was observed. The morphology of PS4 -P4VP4 in the solvent mixture of DMF/water or 1,4-dioxane/water was spherical, but changed to large compound micelles in THF/water. As the P4VP molar ratio decreased, the morphology changed from spherical mixed with cylindrical to vesicles, giant vesicles, and then to LCMs. The present study demonstrated the formation of multiple morphologies through manipulating solvent polarity and block ratio in dilute solution. [source]


Understanding Multicompartment Micelles Using Dissipative Particle Dynamics Simulation

MACROMOLECULAR THEORY AND SIMULATIONS, Issue 2 2007
Chongli Zhong
Abstract Multicompartment micelles are a new class of nanomaterials that may find wide applications in the fields of drug delivery, nanotechnology and catalysis. Due to their structural complexity, as well as the wide parameter space to explore, experimental investigations are a difficult task, to which molecular simulation may contribute greatly. In this paper, the application of the dissipative particle dynamics simulation technique to the understanding of multicompartment micelles is introduced, illustrating that DPD is a powerful tool for identifying new morphologies by varying block length, block ratio and solvent quality in a systematic way. The formation process of multicompartment micelles, as well as shear effects and the self-assembly of nanoparticle mixtures in multicompartment micelles, can also be studied well by DPD simulation. The present work shows that DPD, as well as other simulation techniques and theories, can complement experiments greatly, not only in exploring properties in a wider parameter space, but also by giving a preview of phenomena prior to experiments. DPD, as a mesoscopic dynamic simulation technique, is particularly useful for understanding the dynamic processes of multicompartment micelles at a microscopic level. [source]


Synthesis, Morphology, and Properties of Poly(3-hexylthiophene)- block -Poly(vinylphenyl oxadiazole) Donor,Acceptor Rod,Coil Block Copolymers and Their Memory Device Applications

ADVANCED FUNCTIONAL MATERIALS, Issue 18 2010
Yi-Kai Fang
Abstract Novel donor,acceptor rod,coil diblock copolymers of regioregular poly(3-hexylthiophene) (P3HT)- block -poly(2-phenyl-5-(4-vinylphenyl)-1,3,4-oxadiaz-ole) (POXD) are successfully synthesized by the combination of a modified Grignard metathesis reaction (GRIM) and atom transfer radical polymerization (ATRP). The effects of the block ratios of the P3HT donor and POXD pendant acceptor blocks on the morphology, field effect transistor mobility, and memory device characteristics are explored. The TEM, SAXS, WAXS, and AFM results suggest that the coil block fraction significantly affects the chain packing of the P3HT block and depresses its crystallinity. The optical absorption spectra indicate that the intramolecular charge transfer between the main chain P3HT donor and the side chain POXD acceptor is relatively weak and the level of order of P3HT chains is reduced by the incorporation of the POXD acceptor. The field effect transistor (FET) hole mobility of the system exhibits a similar trend on the optical properties, which are also decreased with the reduced ordered P3HT crystallinity. The low-lying highest occupied molecular orbital (HOMO) energy level (,6.08 eV) of POXD is employed as charge trap for the electrical switching memory devices. P3HT- b -POXD exhibits a non-volatile bistable memory or insulator behavior depending on the P3HT/POXD block ratio and the resulting morphology. The ITO/P3HT44 - b - POXD18/Al memory device shows a non-volatile switching characteristic with negative differential resistance (NDR) effect due to the charge trapped POXD block. These experimental results provide the new strategies for the design of donor-acceptor rod-coil block copolymers for controlling morphology and physical properties as well as advanced memory device applications. [source]


Electroactive Linear,Hyperbranched Block Copolymers Based on Linear Poly(ferrocenylsilane)s and Hyperbranched Poly(carbosilane)s

CHEMISTRY - A EUROPEAN JOURNAL, Issue 36 2009
Frederik Wurm Dipl.-Chem.
Abstract A convenient two-step protocol is presented for synthesis of linear-hyperbranched diblock copolymers consisting of a linear, organometallic poly(ferrocenylsilane) (PFS) block and hyperbranched poly(carbosilane) (hbPCS) segments. Linear PFS diblock copolymers were synthesized through photolytic ring-opening polymerization of dimethyl[1]silaferrocenophane as the first block and methylvinyl[1]silaferrocenophane as the second. These block copolymers served as polyfunctional cores in a subsequent hydrosilylation polyaddition of different silane-based AB2 monomers. Three AB2 monomers (methyldiallylsilane; methyldiundecenylsilane, and ferrocenyldiallylsilane) were investigated; they introduced structural diversity to the hyperbranched block and showed variable reactivity for the hydrosilylation reaction. In the case with the additional ferrocene moiety in the ferrocenyldiallylsilane monomer, an electroactive hyperbranched block was generated. No slow monomer addition was necessary for molecular-weight control of the hyperbranching polyaddition, as the core had much higher functionality and reactivity than the carbosilane monomers. Different block ratios were targeted and hybrid block copolymers with narrow polydispersity (<1.2) were obtained. All the resulting polymers were investigated and characterized by size exclusion chromatography, NMR spectroscopy, cyclic voltammetry, and TEM, and exhibited strongly anisotropic aggregation. [source]